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MX29LV800TMI-70 PDF预览

MX29LV800TMI-70

更新时间: 2024-11-18 22:19:27
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
60页 1244K
描述
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

MX29LV800TMI-70 数据手册

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PRELIMINARY  
MX29LV800T/B  
8M-BIT[1Mx8/512Kx16]CMOSSINGLEVOLTAGE  
3VONLYFLASHMEMORY  
FEATURES  
• Extended single - supply voltage range 2.7V to 3.6V  
• 1,048,576 x 8/524,288 x 16 switchable  
• Singlepowersupplyoperation  
• Status Reply  
-Datapolling&Togglebitfordetectionofprogramand  
eraseoperationcompletion.  
- 3.0V only operation for read, erase and program  
operation  
• Fast access time: 70/90ns  
• Ready/Busy pin (RY/BY)  
-Providesahardwaremethodofdetectingprogramor  
eraseoperationcompletion.  
• Lowpowerconsumption  
• Sectorprotection  
- 20mA maximum active current  
- 0.2uA typical standby current  
• Commandregisterarchitecture  
- Byte/word Programming (9us/11us typical)  
- Sector Erase (Sector structure 16K-Bytex1,  
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)  
• Auto Erase (chip & sector) and Auto Program  
-Automaticallyeraseanycombinationofsectorswith  
Erase Suspend capability.  
- Hardware method to disable any combination of  
sectors from program or erase operations  
- Tempoary sector unprotect allows code changes in  
previously locked sectors.  
• 100,000minimumerase/programcycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Boot Sector Architecture  
- T = Top Boot Sector  
- B = Bottom Boot Sector  
- Automatically program and verify data at specified  
address  
• Low VCC write inhibit is equal to or less than 2.3V  
• Package type:  
• Erasesuspend/EraseResume  
- 44-pin SOP  
- Suspends sector erase operation to read data from,  
orprogramdatato,any sectorthatisnotbeingerased,  
then resumes the erase.  
- 48-pin TSOP  
- 48-pin CSP  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
GENERAL DESCRIPTION  
The MX29LV800T/B is a 8-mega bit Flash memory or-  
ganized as 1M bytes of 8 bits or 512K words of 16 bits.  
MXIC's Flash memories offer the most cost-effective  
and reliable read/write non-volatile random access  
memory. The MX29LV800T/B is packaged in 44-pin  
SOP, 48-pinTSOP, and 48-ball CSP. It is designed to be  
reprogrammed and erased in system or in standard  
EPROM programmers.  
TTL level control inputs and fixed power supply levels  
during erase and programming, while maintaining maxi-  
mum EPROM compatibility.  
MXIC Flash technology reliably stores memory contents  
even after 100,000 erase and program cycles. The MXIC  
cell is designed to optimize the erase and programming  
mechanisms. In addition, the combination of advanced  
tunnel oxide processing and low internal electric fields  
for erase and program operations produces reliable cy-  
cling. The MX29LV800T/B uses a 2.7V~3.6VVCC sup-  
ply to perform the High Reliability Erase and auto Pro-  
gram/Erase algorithms.  
The standard MX29LV800T/B offers access time as fast  
as 70ns, allowing operation of high-speed microproces-  
sors without wait states. To eliminate bus contention,  
the MX29LV800T/B has separate chip enable (CE) and  
output enable (OE) controls.  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up pro-  
tection is proved for stresses up to 100 milliamps on  
address and data pin from -1V to VCC + 1V.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29LV800T/B uses a command register to manage  
this functionality. The command register allows for 100%  
P/N:PM0709  
REV. 1.3, JAN. 24, 2002  
1

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