PRELIMINARY
MX29LV800T/B
8M-BIT[1Mx8/512Kx16]CMOSSINGLEVOLTAGE
3VONLYFLASHMEMORY
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 1,048,576 x 8/524,288 x 16 switchable
• Singlepowersupplyoperation
• Status Reply
-Datapolling&Togglebitfordetectionofprogramand
eraseoperationcompletion.
- 3.0V only operation for read, erase and program
operation
• Fast access time: 70/90ns
• Ready/Busy pin (RY/BY)
-Providesahardwaremethodofdetectingprogramor
eraseoperationcompletion.
• Lowpowerconsumption
• Sectorprotection
- 20mA maximum active current
- 0.2uA typical standby current
• Commandregisterarchitecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Auto Erase (chip & sector) and Auto Program
-Automaticallyeraseanycombinationofsectorswith
Erase Suspend capability.
- Hardware method to disable any combination of
sectors from program or erase operations
- Tempoary sector unprotect allows code changes in
previously locked sectors.
• 100,000minimumerase/programcycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
- Automatically program and verify data at specified
address
• Low VCC write inhibit is equal to or less than 2.3V
• Package type:
• Erasesuspend/EraseResume
- 44-pin SOP
- Suspends sector erase operation to read data from,
orprogramdatato,any sectorthatisnotbeingerased,
then resumes the erase.
- 48-pin TSOP
- 48-pin CSP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
GENERAL DESCRIPTION
The MX29LV800T/B is a 8-mega bit Flash memory or-
ganized as 1M bytes of 8 bits or 512K words of 16 bits.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory. The MX29LV800T/B is packaged in 44-pin
SOP, 48-pinTSOP, and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV800T/B uses a 2.7V~3.6VVCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The standard MX29LV800T/B offers access time as fast
as 70ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV800T/B has separate chip enable (CE) and
output enable (OE) controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV800T/B uses a command register to manage
this functionality. The command register allows for 100%
P/N:PM0709
REV. 1.3, JAN. 24, 2002
1