MX29LV320AT/B
32M-BIT[4Mx8/2Mx16]SINGLEVOLTAGE
3VONLYFLASHMEMORY
FEATURES
• Low Power Consumption
GENERAL FEATURES
- Low active read current: 10mA (typical) at 5MHz
- Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 10 years data retention
• 4,194,304 x 8 / 2,097,152 x 16 switchable
• Sector Structure
- 8K-Byte x 8 and 64K-Byte x 63
• Extra 64K-Byte sector for security
- Features factory locked and identifiable, and cus-
tomer lockable
SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
• Twenty-Four Sector Groups
- Provides sector group protect function to prevent pro-
gram or erase operation in the protected sector group
- Provides chip unprotect function to allow code chang-
ing
• Status Reply
- Data polling & Toggle bits provide detection of pro-
gram and erase operation completion
• Support Common Flash Interface (CFI)
- Provides temporary sector group unprotect function
for code changing in previously protected sector groups
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
HARDWARE FEATURES
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.4V
• Compatible with JEDEC standard
- Pinout and software compatible to single power sup-
ply Flash
• Ready/Busy (RY/BY) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET) Input
- Provides a hardware method to reset the internal state
machine to read mode
• 2nd generation of 3V/32M Flash product
- Fully compatible with MX29LV320T/B device
• WP/ACC input pin
- Provides accelerated program capability
PERFORMANCE
• High Performance
PACKAGE
- Fast access time: 70/90ns
- Fast program time:7us/word typical utilizing acceler-
ate function
• 48-PinTSOP
• 48-Ball CSP
- Fast erase time: 0.9s/sector, 35s/chip (typical)
GENERAL DESCRIPTION
The MX29LV320AT/B is a 32-mega bit Flash memory
organized as 4M bytes of 8 bits and 2M words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV320AT/B is packaged in 48-pin TSOP and
48-ball CSP. It is designed to be reprogrammed and
erased in system or in standard EPROM programmers.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV320AT/B uses a command register to manage
this functionality.
MXIC Flash technology reliably stores memory
contents even after 100,000 erase and program
cycles. The MXIC cell is designed to optimize the
erase and program mechanisms. In addition, the
combination of advanced tunnel oxide processing
and low internal electric fields for erase and
programming operations produces reliable cycling.
The standard MX29LV320AT/B offers access time as
fast as 70ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LV320AT/B has separate chip enable (CE)
and output enable (OE) controls.
P/N:PM1008
REV. 1.1, MAY 28, 2004
1