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MX29LV320ABXBI-90 PDF预览

MX29LV320ABXBI-90

更新时间: 2024-11-25 05:08:07
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存存储内存集成电路
页数 文件大小 规格书
60页 604K
描述
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

MX29LV320ABXBI-90 数据手册

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MX29LV320AT/B  
32M-BIT[4Mx8/2Mx16]SINGLEVOLTAGE  
3VONLYFLASHMEMORY  
FEATURES  
• Low Power Consumption  
GENERAL FEATURES  
- Low active read current: 10mA (typical) at 5MHz  
- Low standby current: 200nA (typical)  
• Minimum 100,000 erase/program cycle  
• 10 years data retention  
• 4,194,304 x 8 / 2,097,152 x 16 switchable  
• Sector Structure  
- 8K-Byte x 8 and 64K-Byte x 63  
• Extra 64K-Byte sector for security  
- Features factory locked and identifiable, and cus-  
tomer lockable  
SOFTWARE FEATURES  
• Erase Suspend/ Erase Resume  
- Suspends sector erase operation to read data from  
or program data to another sector which is not being  
erased  
Twenty-Four Sector Groups  
- Provides sector group protect function to prevent pro-  
gram or erase operation in the protected sector group  
- Provides chip unprotect function to allow code chang-  
ing  
• Status Reply  
- Data polling & Toggle bits provide detection of pro-  
gram and erase operation completion  
• Support Common Flash Interface (CFI)  
- Provides temporary sector group unprotect function  
for code changing in previously protected sector groups  
• Single Power Supply Operation  
- 2.7 to 3.6 volt for read, erase, and program opera-  
tions  
HARDWARE FEATURES  
• Latch-up protected to 250mA from -1V to Vcc + 1V  
• Low Vcc write inhibit is equal to or less than 1.4V  
• Compatible with JEDEC standard  
- Pinout and software compatible to single power sup-  
ply Flash  
• Ready/Busy (RY/BY) Output  
- Provides a hardware method of detecting program  
and erase operation completion  
• Hardware Reset (RESET) Input  
- Provides a hardware method to reset the internal state  
machine to read mode  
2nd generation of 3V/32M Flash product  
- Fully compatible with MX29LV320T/B device  
• WP/ACC input pin  
- Provides accelerated program capability  
PERFORMANCE  
• High Performance  
PACKAGE  
- Fast access time: 70/90ns  
- Fast program time:7us/word typical utilizing acceler-  
ate function  
• 48-PinTSOP  
• 48-Ball CSP  
- Fast erase time: 0.9s/sector, 35s/chip (typical)  
GENERAL DESCRIPTION  
The MX29LV320AT/B is a 32-mega bit Flash memory  
organized as 4M bytes of 8 bits and 2M words of 16 bits.  
MXIC's Flash memories offer the most cost-effective and  
reliable read/write non-volatile random access memory.  
The MX29LV320AT/B is packaged in 48-pin TSOP and  
48-ball CSP. It is designed to be reprogrammed and  
erased in system or in standard EPROM programmers.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29LV320AT/B uses a command register to manage  
this functionality.  
MXIC Flash technology reliably stores memory  
contents even after 100,000 erase and program  
cycles. The MXIC cell is designed to optimize the  
erase and program mechanisms. In addition, the  
combination of advanced tunnel oxide processing  
and low internal electric fields for erase and  
programming operations produces reliable cycling.  
The standard MX29LV320AT/B offers access time as  
fast as 70ns, allowing operation of high-speed micropro-  
cessors without wait states. To eliminate bus conten-  
tion, the MX29LV320AT/B has separate chip enable (CE)  
and output enable (OE) controls.  
P/N:PM1008  
REV. 1.1, MAY 28, 2004  
1

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