Datasheet > 存储 > 闪存> MX29LV320ATTC-90

MX29LV320ATTC-90

更新时间： 2024-01-03 17:52:05

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
60页	604K
描述
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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技术参数
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MX29LV320ATTC-90 技术参数

生命周期：	Obsolete	零件包装代码：	TSOP1
包装说明：	12 X 20 MM, PLASTIC, MO-142, TSOP1-48	针数：	48
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.1.A
HTS代码：	8542.32.00.51	风险等级：	5.5
Is Samacsys：	N	最长访问时间：	90 ns
备用内存宽度：	8	启动块：	TOP
命令用户界面：	YES	通用闪存接口：	YES
数据轮询：	YES	JESD-30 代码：	R-PDSO-G48
长度：	18.4 mm	内存密度：	33554432 bit
内存集成电路类型：	FLASH	内存宽度：	16
湿度敏感等级：	2A	功能数量：	1
部门数/规模：	8,63	端子数量：	48
字数：	2097152 words	字数代码：	2000000
工作模式：	ASYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	2MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1
封装等效代码：	TSSOP48,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	3/3.3 V
编程电压：	3 V	认证状态：	Not Qualified
就绪/忙碌：	YES	座面最大高度：	1.2 mm
部门规模：	8K,64K	最大待机电流：	0.000015 A
子类别：	Flash Memories	最大压摆率：	0.03 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
切换位：	YES	类型：	NOR TYPE
宽度：	12 mm	Base Number Matches：	1

MX29LV320ATTC-90 数据手册

MX29LV320AT/B

32M-BIT[4Mx8/2Mx16]SINGLEVOLTAGE

3VONLYFLASHMEMORY

FEATURES

• Low Power Consumption

GENERAL FEATURES

- Low active read current: 10mA (typical) at 5MHz

- Low standby current: 200nA (typical)

• Minimum 100,000 erase/program cycle

• 10 years data retention

• 4,194,304 x 8 / 2,097,152 x 16 switchable

• Sector Structure

- 8K-Byte x 8 and 64K-Byte x 63

• Extra 64K-Byte sector for security

- Features factory locked and identifiable, and cus-

tomer lockable

SOFTWARE FEATURES

• Erase Suspend/ Erase Resume

- Suspends sector erase operation to read data from

or program data to another sector which is not being

erased

• Twenty-Four Sector Groups

- Provides sector group protect function to prevent pro-

gram or erase operation in the protected sector group

- Provides chip unprotect function to allow code chang-

ing

• Status Reply

- Data polling & Toggle bits provide detection of pro-

gram and erase operation completion

• Support Common Flash Interface (CFI)

- Provides temporary sector group unprotect function

for code changing in previously protected sector groups

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program opera-

tions

HARDWARE FEATURES

• Latch-up protected to 250mA from -1V to Vcc + 1V

• Low Vcc write inhibit is equal to or less than 1.4V

• Compatible with JEDEC standard

- Pinout and software compatible to single power sup-

ply Flash

• Ready/Busy (RY/BY) Output

- Provides a hardware method of detecting program

and erase operation completion

• Hardware Reset (RESET) Input

- Provides a hardware method to reset the internal state

machine to read mode

• 2nd generation of 3V/32M Flash product

- Fully compatible with MX29LV320T/B device

• WP/ACC input pin

- Provides accelerated program capability

PERFORMANCE

• High Performance

PACKAGE

- Fast access time: 70/90ns

- Fast program time:7us/word typical utilizing acceler-

ate function

• 48-PinTSOP

• 48-Ball CSP

- Fast erase time: 0.9s/sector, 35s/chip (typical)

GENERAL DESCRIPTION

The MX29LV320AT/B is a 32-mega bit Flash memory

organized as 4M bytes of 8 bits and 2M words of 16 bits.

MXIC's Flash memories offer the most cost-effective and

reliable read/write non-volatile random access memory.

The MX29LV320AT/B is packaged in 48-pin TSOP and

48-ball CSP. It is designed to be reprogrammed and

erased in system or in standard EPROM programmers.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV320AT/B uses a command register to manage

this functionality.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and program mechanisms. In addition, the

combination of advanced tunnel oxide processing

and low internal electric fields for erase and

programming operations produces reliable cycling.

The standard MX29LV320AT/B offers access time as

fast as 70ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX29LV320AT/B has separate chip enable (CE)

and output enable (OE) controls.

P/N:PM1008

REV. 1.1, MAY 28, 2004

12 3 4 5 6 7...60

中文翻译

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MX29LV320ATTC-90 替代型号

型号	品牌	替代类型	描述	数据表
MX29LV321DTTI-90G	Macronix	功能相似	Flash, 2MX16, 90ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, MO-142, TSOP-48

与MX29LV320ATTC-90相关器件

型号	品牌	获取价格	描述	数据表
MX29LV320ATTC-90G	Macronix	获取价格	32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-70	Macronix	获取价格	32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-70G	Macronix	获取价格	32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-90	Macronix	获取价格	32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-90G	Macronix	获取价格	32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATXBC-70	Macronix	获取价格	32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATXBC-70G	Macronix	获取价格	32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATXBC-90	Macronix	获取价格	32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATXBC-90G	Macronix	获取价格	32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATXBI-70	Macronix	获取价格	32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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