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MX29LV040QC-70 PDF预览

MX29LV040QC-70

更新时间: 2024-09-19 23:02:47
品牌 Logo 应用领域
旺宏电子 - Macronix /
页数 文件大小 规格书
51页 712K
描述
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY

MX29LV040QC-70 数据手册

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ADVANCE INFORMATION  
MX29LV040  
4M-BIT[512Kx8]CMOSSINGLEVOLTAGE  
3VONLYEQUALSECTORFLASHMEMORY  
FEATURES  
• Extended single - supply voltage range 2.7V to 3.6V  
• 524,288 x 8 only  
then resumes the erase.  
• Status Reply  
• Singlepowersupplyoperation  
-Datapolling&Togglebitfordetectionofprogramand  
eraseoperationcompletion.  
• Sectorprotection  
- 3.0V only operation for read, erase and program  
operation  
• Fast access time: 55R/70/90ns  
• Lowpowerconsumption  
- Hardware method to disable any combination of  
sectors from program or erase operations  
-Anycombinationofsectorscanbeerasedwitherase  
suspend/resumefunction.  
- 20mA maximum active current  
- 0.2uA typical standby current  
• Commandregisterarchitecture  
- 8 equal sector of 64K-Byte each  
- Byte Programming (9us typical)  
- Sector Erase (Sector structure 64K-Byte x8)  
• Auto Erase (chip & sector) and Auto Program  
-Automaticallyeraseanycombinationofsectorswith  
Erase Suspend capability.  
- Tempoary sector unprotect allows code changes in  
previously locked sectors.  
• 100,000minimumerase/programcycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Low VCC write inhibit is equal to or less than 2.3V  
• Package type:  
-32-pinPLCC  
- Automatically program and verify data at specified  
address  
• Erasesuspend/EraseResume  
- Suspends sector erase operation to read data from,  
orprogramdatato,any sectorthatisnotbeingerased,  
- 32-pin TSOP  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
GENERAL DESCRIPTION  
during erase and programming, while maintaining maxi-  
mum EPROM compatibility.  
The MX29LV040 is a 4-mega bit Flash memory orga-  
nized as 512K bytes of 8 bits. MXIC's Flash memories  
offer the most cost-effective and reliable read/write non-  
volatile random access memory. The MX29LV040 is  
packaged in 32-pin PLCC and TSOP. It is designed to  
be reprogrammed and erased in system or in standard  
EPROM programmers.  
MXIC Flash technology reliably stores memory contents  
even after 100,000 erase and program cycles. The MXIC  
cell is designed to optimize the erase and programming  
mechanisms. In addition, the combination of advanced  
tunnel oxide processing and low internal electric fields  
for erase and program operations produces reliable cy-  
cling. The MX29LV040 uses a 2.7V~3.6V VCC supply  
to perform the High Reliability Erase and auto Program/  
Erase algorithms.  
The standard MX29LV040 offers access time as fast as  
55ns, allowing operation of high-speed microprocessors  
without wait states. To eliminate bus contention, the  
MX29LV040 has separate chip enable (CE) and output  
enable (OE) controls.  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up pro-  
tection is proved for stresses up to 100 milliamps on  
address and data pin from -1V to VCC + 1V.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29LV040 uses a command register to manage this  
functionality. The command register allows for 100%  
TTL level control inputs and fixed power supply levels  
P/N:PM0722  
REV. 0.7, JUL. 12, 2001  
1

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