Datasheet > MX26L6413TC-90

MX26L6413TC-90

更新时间： 2024-11-22 21:17:35

品牌	Logo	应用领域
旺宏电子 - Macronix		光电二极管内存集成电路
页数	文件大小	规格书
37页	618K
描述
Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142, TSOP1-48

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MX26L6413TC-90 数据手册

ADVANCED INFORMATION

MX26L6413

64M-BIT[4Mx16]CMOS

MULTIPLE-TIME-PROGRAMMABLEEPROM

FEATURES

• 4,194,304 x 16 byte structure

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase andprogram

operation

• Minimum 100 erase/program cycle

• Status Reply

- Data polling & Toggle bits provide detection of

programanderaseoperationcompletion

• 12V ACC input pin provides accelerated program

capability

• Low Vcc write inhibit is equal to or less than 2.5V

• Compatible with JEDEC standard

• HighPerformance

- Fast access time: 90/120ns (typ.)

- Fast program time: 140s/chip (typ.)

- Fast erase time: 150s/chip (typ.)

• LowPowerConsumption

• Output voltages and input voltages on the device is

deterined by the voltage on the VI/O pin.

- VI/O voltage range:1.65V~3.6V

• 10 years data retention

• Package

- Low active read current: 17mA (typ.) at 5MHz

- 48-Pin TSOP

- Low standby current: 30uA (typ.)

- 63-Ball CSP

GENERAL DESCRIPTION

MXIC's MTP EPROM^TMtechnology reliably stores

memory contents even after 100 erase and program

cycles. The MXIC cell is designed to optimize the erase

andprogrammechanisms.Inaddition,thecombinationof

advanced tunnel oxide processing and low internal

electric fields for erase and programming operations

produces reliable cycling.

The MX26L6413 is a 64M bit MTP EPROM^TMorganized

as 4M bytes of 16 bits. MXIC's MTP EPROM^TMoffer the

most cost-effective and reliable read/write non-volatile

randomaccessmemory.TheMX26L6413ispackagedin

48-pin TSOP, 48-ball CSP amd 63-ball CSP. It is

designedtobereprogrammedanderasedinsystemorin

standardEPROMprogrammers.

The MX26L6413 uses a 2.7V to 3.6V VCC supply to

perform the High Reliability Erase and auto Program/

Erasealgorithms.

The standard MX26L6413 offers access time as fast as

90ns,allowingoperationofhigh-speedmicroprocessors

without wait states. To eliminate bus contention, the

MX26L6413 has separate chip enable (CE) and output

enable OE controls. MXIC's MTP EPROM^TMaugment

EPROMfunctionalitywithin-circuitelectricalerasureand

programming.TheMX26L6413usesacommandregister

to manage this functionality.

Thehighestdegreeoflatch-upprotectionisachievedwith

MXIC'sproprietarynon-epiprocess.Latch-upprotection

isprovedforstressesupto100milliampsonaddressand

data pin from -1V to VCC +1V.

P/N:PM0914

REV. 0.1, NOV. 20, 2002

12 3 4 5 6 7...37

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与MX26L6413TC-90相关器件

型号	品牌	获取价格	描述	数据表
MX26L6413TI-90	Macronix	获取价格	Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142, TSOP1-48
MX26L6413XBC-90	Macronix	获取价格	Flash, 4MX16, 90ns, PBGA63, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, MO-210, CSP
MX26L6413XBI-12	Macronix	获取价格	Flash, 4MX16, 120ns, PBGA63, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, MO-210, CS
MX26L6413XBI-90	Macronix	获取价格	Flash, 4MX16, 90ns, PBGA63, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, MO-210, CSP
MX26L6419	Macronix	获取价格	64M [x16] SINGLE 3V PAGE MODE MTP MEMORY
MX26L6419TC-10	Macronix	获取价格	64M [x16] SINGLE 3V PAGE MODE MTP MEMORY
MX26L6420	MAXIM	获取价格	64M位[ 4Mx16 ]的CMOS多时间可编程存储器
MX26L6420	Macronix	获取价格	64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L6420MC-12	Macronix	获取价格	64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L6420MC-90	Macronix	获取价格	64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM

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