Datasheet > MX26L6420XBC-12

MX26L6420XBC-12

更新时间： 2024-11-21 22:12:15

品牌	Logo	应用领域
旺宏电子 - Macronix		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
39页	1253K
描述
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM

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中文翻译

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MX26L6420XBC-12 数据手册

ADVANCED INFORMATION

MX26L6420

64M-BIT[4Mx16]CMOS

MULTIPLE-TIME-PROGRAMMABLEEPROM

FEATURES

• 4,194,304 x 16 byte structure

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program

operations

• Status Reply

- Data polling & Toggle bits provide detection of

programanderaseoperationcompletion

• 12V ACC input pin provides accelerated program

capability

• Low Vcc write inhibit is equal to or less than 2.5V

• Compatible with JEDEC standard

• HighPerformance

- Fast access time: 90/120ns (typ.)

- Fast program time: 140s/chip (typ.)

- Fast erase time: 150s/chip (typ.)

• LowPowerConsumption

• Output voltages and input voltages on the device is

deterined by the voltage on the VI/O pin.

- VI/O voltage range:1.65V~3.6V

• 10 years data retention

• Package

- 44-Pin SOP

- Low active read current: 17mA (typ.) at 5MHz

- Low standby current: 30uA (typ.)

• Minimum 100 erase/program cycle

- 48-Pin TSOP

- 48-Ball CSP

- 63-Ball CSP

GENERAL DESCRIPTION

MXIC's MTP EPROM^TMtechnology reliably stores

memory contents even after 100 erase and program

cycles. The MXIC cell is designed to optimize the erase

andprogrammechanisms.Inaddition,thecombinationof

advanced tunnel oxide processing and low internal

electric fields for erase and programming operations

produces reliable cycling.

The MX26L6420 is a 64M bit MTP EPROM^TMorganized

as 4M bytes of 16 bits. MXIC's MTP EPROM^TMoffer the

most cost-effective and reliable read/write non-volatile

randomaccessmemory.TheMX26L6420ispackagedin

44SOP,48-pinTSOP,48-ballCSPand63-ballCSP.Itis

designedtobereprogrammedanderasedinsystemorin

standardEPROMprogrammers.

The MX26L6420 uses a 2.7V to 3.6V VCC supply to

perform the High Reliability Erase and auto Program/

Erasealgorithms.

The standard MX26L6420 offers access time as fast as

90ns,allowingoperationofhigh-speedmicroprocessors

without wait states. To eliminate bus contention, the

MX26L6420 has separate chip enable (CE) and output

enable OE controls. MXIC's MTP EPROM^TMaugment

EPROMfunctionalitywithin-circuitelectricalerasureand

programming.TheMX26L6420usesacommandregister

to manage this functionality.

Thehighestdegreeoflatch-upprotectionisachievedwith

MXIC'sproprietarynon-epiprocess.Latch-upprotection

isprovedforstressesupto100milliampsonaddressand

data pin from -1V to VCC +1V.

P/N:PM0823

REV. 0.5, JAN. 29, 2002

12 3 4 5 6 7...39

中文翻译

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与MX26L6420XBC-12相关器件

型号	品牌	获取价格	描述	数据表
MX26L6420XBC-90	Macronix	获取价格	64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L6420XBI-12	Macronix	获取价格	64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L6420XBI-90	Macronix	获取价格	64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26LV004B	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV004BQC-55	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV004BQC-55G	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV004BQC-70	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV004BQC-70G	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV004BTC-55	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV004BTC-55G	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

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