Datasheet > 存储 > 闪存> MX26LV004TQC-55

MX26LV004TQC-55

更新时间： 2024-11-22 03:26:39

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路
页数	文件大小	规格书
43页	460K
描述
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

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中文翻译

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MX26LV004TQC-55 数据手册

MX26LV004T/B

Macronix NBit^TMMemory Family

4M-BIT [512K x 8] CMOS SINGLE VOLTAGE

3V ONLY HIGH SPEED eLiteFlash^TMMEMORY

FEATURES

• Extended single - supply voltage range 3.0V to 3.6V

• 524,288 x 8

• Status Reply

- Data# polling & Toggle bit for detection of program

anderaseoperationcompletion.

• Ready/Busy# pin (RY/BY#)

-Providesahardwaremethodofdetectingprogramor

eraseoperationcompletion.

• Singlepowersupplyoperation

- 3.0V only operation for read, erase and program

operation

• Fast access time: 55/70ns

• Lowpowerconsumption

• 2,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Package type:

- 30mA maximum active current

- 30uA typical standby current

• Commandregisterarchitecture

- Byte Programming (55us typical)

- Sector Erase (Sector structure 16K-Byte x1,

8K-Byte x2, 32K-Byte x1, and 64K-Byte x7)

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase Suspend capability.

- 40-pin TSOP

-32-pinPLCC

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• 20 years data retention

- Automatically program and verify data at specified

address

GENERAL DESCRIPTION

The MX26LV004T/B is a 4-mega bit Flash memory orga-

nized as 512K bytes of 8 bits. MXIC's Flash memories

offer the most cost-effective and reliable read/write non-

volatile random access memory. The MX26LV004T/B is

packaged in 40-pin TSOP. It is designed to be repro-

grammed and erased in system or in standard EPROM

programmers.

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 2,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX26LV004T/B uses a 3.0V~3.6VVCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

The standard MX26LV004T/B offers access time as fast

as 55ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX26LV004T/B has separate chip enable (CE#) and

output enable (OE#) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX26LV004T/B uses a command register to manage

this functionality. The command register allows for 100%

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

P/N:PM1099

REV. 1.0, NOV. 08, 2004

12 3 4 5 6 7...43

中文翻译

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与MX26LV004TQC-55相关器件

型号	品牌	获取价格	描述	数据表
MX26LV004TQC-55G	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV004TQC-70	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV004TQC-70G	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV004TTC-55	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV004TTC-55G	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV004TTC-70	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV004TTC-70G	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV008B	Macronix	获取价格	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV008BTC-55	Macronix	获取价格	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV008BTC-70	Macronix	获取价格	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

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