Datasheet > MX26LV040

MX26LV040

更新时间： 2024-11-22 04:38:35

品牌	Logo	应用领域
旺宏电子 - Macronix		/
页数	文件大小	规格书
40页	588K
描述
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

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MX26LV040 数据手册

MX26LV040

Macronix NBit^TMMemory Family

4M-BIT [512K x 8] CMOS SINGLE VOLTAGE

3V ONLY HIGH SPEED eLiteFlash^TMMEMORY

FEATURES

• Extended single - supply voltage range 3.0V to 3.6V

• 524,288 x 8

- Automatically program and verify data at specified

address

• Singlepowersupplyoperation

- 3.0V only operation for read, erase and program

operation

• Status Reply

- Data# polling & Toggle bit for detection of program

anderaseoperationcompletion.

• 2,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Package type:

• Fast access time: 55/70ns

• Lowpowerconsumption

- 30mA maximum active current

- 30uA typical standby current

-32-pinPLCC

• Commandregisterarchitecture

- Byte Programming (55us typical)

- Sector Erase (Sector structure 64K-Byte x8)

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase Suspend capability.

- 32-pin TSOP

- 32-pin PDIP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• 20 years data retention

GENERAL DESCRIPTION

The MX26LV040 is a 4-mega bit Flash memory orga-

nized as 512K bytes of 8 bits. MXIC's Flash memories

offer the most cost-effective and reliable read/write non-

volatile random access memory. The MX26LV040 is pack-

aged in 32-pin PLCC, 32-pin TSOP and 32-pin PDIP. It

is designed to be reprogrammed and erased in system

or in standard EPROM programmers.

level control inputs and fixed power supply levels during

erase and programming, while maintaining maximum

EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 2,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX26LV040 uses a 3.0V~3.6V VCC supply

to perform the High Reliability Erase and auto Program/

Erase algorithms.

The standard MX26LV040 offers access time as fast as

55ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX26LV040 has separate chip enable (CE#) and output

enable (OE#) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX26LV040 uses a command register to manage this

functionality. The command register allows for 100%TTL

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

P/N:PM1118

REV. 1.0, NOV. 08, 2004

12 3 4 5 6 7...40

中文翻译

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与MX26LV040相关器件

型号	品牌	获取价格	描述	数据表
MX26LV040PC-55	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV040PC-55G	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV040PC-70	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV040PC-70G	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV040QC-55	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV040QC-55G	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV040QC-70	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV040QC-70G	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV040TC-55	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV040TC-55G	Macronix	获取价格	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

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