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MX26LV160ABTC-55 PDF预览

MX26LV160ABTC-55

更新时间: 2024-11-23 04:38:35
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
61页 742K
描述
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY

MX26LV160ABTC-55 数据手册

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MX26LV160AT/AB  
Macronix NBitTM Memory Family  
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE  
3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY  
FEATURES  
• Extended single - supply voltage range 3.0V to 3.6V  
• 2,097,152 x 8 / 1,048,576 x 16 switchable  
• Singlepowersupplyoperation  
-Providesahardwaremethodofdetectingprogramor  
eraseoperationcompletion  
• Sectorprotection  
- 3.0V only operation for read, erase and program  
operation  
• Fast access time: 55/70ns  
- Hardware method to disable any combination of  
sectors from program or erase operations  
-Temporarysectorunprotectallowscodechangesin  
previously locked sectors  
• Lowpowerconsumption  
- 30mA maximum active current  
- 30uA typical standby current  
• CFI (Common Flash Interface) compliant  
- Flash device parameters stored on the device and  
provide the host system to access  
• 2K minimum erase/program cycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Boot Sector Architecture  
- T = Top Boot Sector  
- B = Bottom Boot Sector  
• Package type:  
• Commandregisterarchitecture  
- Byte/word Programming (55us/70us typical)  
- Sector Erase (Sector structure 16K-Bytex1,  
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)  
• Auto Erase (chip & sector) and Auto Program  
-Automaticallyeraseanycombinationofsectorswith  
erase verify capability  
- Automatically program and verify data at specified  
address  
- 44-pin SOP  
- 48-pin TSOP  
• Status Reply  
- 48-ball CSP  
- Data# polling & Toggle bit for detection of program  
anderaseoperationcompletion  
• Ready/Busy# pin (RY/BY#)  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
• 20 years data retention  
GENERAL DESCRIPTION  
The MX26LV160AT/AB is a 16-mega bit high speed Flash  
memory organized as 2M bytes of 8 bits or 1M words of  
16 bits. MXIC's high speed Flash memories offer the  
most cost-effective and reliable read/write non-volatile  
random access memory. The MX26LV160AT/AB is pack-  
aged in 44-pin SOP, 48-pinTSOP, and 48-ball CSP. It is  
designed to be reprogrammed and erased in system or  
in standard EPROM programmers.  
lows for 100% TTL level control inputs and fixed power  
supply levels during erase and programming, while main-  
taining maximum EPROM compatibility.  
MXIC high speed Flash technology reliably stores  
memory contents even after 2K erase and program  
cycles. The MXIC cell is designed to optimize the erase  
and programming mechanisms. In addition, the combi-  
nation of advanced tunnel oxide processing and low in-  
ternal electric fields for erase and program operations  
produces reliable cycling. The MX26LV160AT/AB uses  
a 3.0V~3.6VVCC supply to perform the High Reliability  
Erase and auto Program/Erase algorithms.  
The standard MX26LV160AT/AB offers access time as  
fast as 55ns, allowing operation of high-speed micropro-  
cessors without wait states. To eliminate bus conten-  
tion, the MX26LV160AT/AB has separate chip enable  
(CE#) and output enable (OE#) controls.  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up pro-  
tection is proved for stresses up to 100 milliamperes on  
address and data pin from -1V to VCC + 1V.  
MXIC's high speed Flash memories augment EPROM  
functionality with in-circuit electrical erasure and program-  
ming. The MX26LV160AT/AB uses a command register  
to manage this functionality. The command register al-  
P/N:PM1123  
REV. 1.1, NOV. 18, 2004  
1

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