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MV830B PDF预览

MV830B

更新时间: 2024-09-09 18:51:35
品牌 Logo 应用领域
APITECH 测试二极管变容二极管
页数 文件大小 规格书
1页 73K
描述
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 15pF C(T), 30V, Silicon, Abrupt, DO-7

MV830B 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
最小击穿电压:30 V外壳连接:ISOLATED
配置:SINGLE二极管电容容差:5%
最小二极管电容比:1.8标称二极管电容:15 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJEDEC-95代码:DO-7
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.4 W
认证状态:Not Qualified最小质量因数:30
最大重复峰值反向电压:30 V最大反向电流:0.2 µA
反向测试电压:25 V子类别:Varactors
表面贴装:NO端子形式:WIRE
端子位置:AXIAL变容二极管分类:ABRUPT
Base Number Matches:1

MV830B 数据手册

  

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