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MURA115T3G PDF预览

MURA115T3G

更新时间: 2024-11-17 03:53:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 49K
描述
ULTRAFAST RECTIFIERS 1 AMPERE, 100−200 VOLTS

MURA115T3G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMA , 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:1.22
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.71 V
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:40 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:150 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MURA115T3G 数据手册

 浏览型号MURA115T3G的Datasheet PDF文件第2页浏览型号MURA115T3G的Datasheet PDF文件第3页浏览型号MURA115T3G的Datasheet PDF文件第4页 
MURA115T3, MURA120T3  
Preferred Devices  
Surface Mount  
Ultrafast Power Rectifiers  
Ideally suited for high voltage, high frequency rectification, or as  
free wheeling and protection diodes in surface mount applications  
where compact size and weight are critical to the system.  
http://onsemi.com  
Features  
Small Compact Surface Mountable Package with J−Bend Leads  
Rectangular Package for Automated Handling  
ULTRAFAST RECTIFIERS  
1 AMPERE, 100−200 VOLTS  
High Temperature Glass Passivated Junction  
Low Forward Voltage Drop (0.71 V Max @ 1.0 A, T = 150°C)  
J
Pb−Free Packages are Available  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 70 mg (Approximately)  
SMA  
CASE 403D  
PLASTIC  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
MARKING DIAGRAM  
Polarity: Polarity Band Indicates Cathode Lead  
ESD Protection: Human Body Model > 4000 V (Class 3)  
Machine Model > 400 V (Class C  
U4x  
AYWW G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
V
RRM  
U4x = Device Code  
x = C for MURA115T3  
= D for MURA120T3  
DC Blocking Voltage  
MURA115T3  
MURA120T3  
150  
200  
R
Average Rectified Forward Current  
A
A
A
Y
= Assembly Location  
= Year  
@ T = 155°C  
1.0  
2.0  
L
@ T = 135°C  
L
WW = Work Week  
G
= Pb−Free Package  
Non-Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
40  
ORDERING INFORMATION  
Operating Junction Temperature Range  
T
−65 to +175  
°C  
J
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
MURA115T3  
MURA115T3G  
SMA  
5000/Tape & Reel  
5000/Tape & Reel  
Characteristic  
Symbol  
Max  
Unit  
SMA  
(Pb−Free)  
Thermal Resistance, Junction−to−Lead  
Psi  
24  
°C/W  
JL  
(T = 25°C) (Note 1)  
(Note 2)  
R
L
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
216  
MURA120T3  
SMA  
5000/Tape & Reel  
5000/Tape & Reel  
q
JA  
MURA120T3G  
SMA  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Rating applies when surface mounted on the minimum pad size recommended,  
PC Board FR−4.  
Preferred devices are recommended choices for future use  
and best overall value.  
2. In compliance with JEDEC 51, these values (historically represented by R  
)
q
JL  
are now referenced as Psi  
.
JL  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 5  
MURA115T3/D  
 

MURA115T3G 替代型号

型号 品牌 替代类型 描述 数据表
MURA115T3 ONSEMI

完全替代

Surface Mount Ultrafast Power Rectifiers
US1J-13-F DIODES

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1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER

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