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MURA130T3G PDF预览

MURA130T3G

更新时间: 2024-02-28 14:21:07
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管测试光电二极管超快速恢复能力电源超快恢复二极管快速恢复二极管
页数 文件大小 规格书
4页 48K
描述
Surface Mount Ultrafast Power Rectifiers

MURA130T3G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMA, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:5 weeks
风险等级:1.2Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:ULTRA FAST RECOVERY POWER
最小击穿电压:300 V配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PDSO-J2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:35 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向电流:5 µA最大反向恢复时间:0.065 µs
反向测试电压:300 V表面贴装:YES
端子面层:Tin (Sn)端子形式:J BEND
端子位置:DUALBase Number Matches:1

MURA130T3G 数据手册

 浏览型号MURA130T3G的Datasheet PDF文件第2页浏览型号MURA130T3G的Datasheet PDF文件第3页浏览型号MURA130T3G的Datasheet PDF文件第4页 
MURA130T3, MURA140T3  
Preferred Devices  
Surface Mount  
Ultrafast Power Rectifiers  
Ideally suited for high voltage, high frequency rectification, or as  
free wheeling and protection diodes in surface mount applications  
where compact size and weight are critical to the system.  
http://onsemi.com  
Features  
Small Compact Surface Mountable Package with J−Bend Leads  
Rectangular Package for Automated Handling  
ULTRAFAST RECTIFIERS  
1 AMPERE, 300−400 VOLTS  
High Temperature Glass Passivated Junction  
Low Forward Voltage Drop (0.8 V Max @ 1.0 A, T = 150°C)  
J
Pb−Free Packages are Available  
Mechanical Characteristics:  
Case: Epoxy, Molded  
SMA  
CASE 403D  
PLASTIC  
Weight: 70 mg (Approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
MARKING DIAGRAM  
Polarity: Polarity Band Indicates Cathode Lead  
ESD Protection: Human Body Model > 4000 V (Class 3)  
Machine Model > 400 V (Class C)  
U4x  
AYWW G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
V
V
U4x = Device Code  
x = F for MURA130T3  
= G for MURA140T3  
RRM  
V
RWM  
V
DC Blocking Voltage  
MURA130T3  
MURA140T3  
300  
400  
R
A
Y
= Assembly Location  
= Year  
Average Rectified Forward Current  
I
A
A
F(AV)  
WW = Work Week  
@ T = 150°C  
1.0  
2.0  
L
@ T = 125°C  
G
= Pb−Free Package  
L
Non-Repetitive Peak Surge Current  
(Surge Applied at Rated Load Condtions  
Halfwave, Single Phase, 60 Hz)  
I
35  
FSM  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Operating Junction Temperature Range  
T
J
−65 to +175 °C  
MURA130T3  
SMA  
5000/Tape & Reel  
5000/Tape & Reel  
THERMAL CHARACTERISTICS  
MURA130T3G  
SMA  
(Pb−Free)  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Lead  
Psi  
24  
°C/W  
JL  
(T = 25°C) (Note 1)  
(Note 2)  
MURA140T3  
SMA  
5000/Tape & Reel  
5000/Tape & Reel  
L
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
216  
θ
JA  
MURA140T3G  
SMA  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Rating applies when surface mounted on the minimum pad size recommended,  
PC Board FR−4.  
Preferred devices are recommended choices for future use  
and best overall value.  
2. In compliance with JEDEC 51, these values (historically represented by R  
)
θ
JL  
are now referenced as Psi  
.
JL  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 4  
MURA130T3/D  
 

MURA130T3G 替代型号

型号 品牌 替代类型 描述 数据表
MURA130T3 ONSEMI

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