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MURA160-T3-LF PDF预览

MURA160-T3-LF

更新时间: 2024-11-18 20:01:47
品牌 Logo 应用领域
WTE 瞄准线光电二极管
页数 文件大小 规格书
4页 40K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

MURA160-T3-LF 数据手册

 浏览型号MURA160-T3-LF的Datasheet PDF文件第2页浏览型号MURA160-T3-LF的Datasheet PDF文件第3页浏览型号MURA160-T3-LF的Datasheet PDF文件第4页 
®
MURA160  
1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE  
WON-TOP ELECTRONICS  
Features  
Very Low VF 1.25V Max. @1.0A  
Glass Passivated Die Construction  
Ideally Suited for Automatic Assembly  
Surge Overload Rating to 30A Peak  
Low Power Loss  
Super-Fast Recovery Time  
Ideally Suited for Use in High Frequency  
B
D
A
F
SMPS, Inverters and As Free Wheeling Diodes  
C
H
G
E
SMA/DO-214AC  
Min  
Mechanical Data  
Dim  
A
Max  
2.92  
4.60  
1.90  
0.305  
5.30  
2.44  
0.203  
1.52  
Case: SMA/DO-214AC, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
2.29  
B
4.00  
C
1.27  
Polarity: Cathode Band or Cathode Notch  
Marking: Device Code, See Page 3  
Weight: 0.064 grams (approx.)  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
0.152  
4.80  
E
F
2.00  
G
H
0.051  
0.76  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
MURA160  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
600  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
420  
1.0  
V
A
Average Rectified Output Current  
@TL = 110°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.25  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
5.0  
150  
µA  
Reverse Recovery Time (Note 1)  
trr  
50  
8
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
Thermal Resistance Junction to Ambient (Note 3)  
Thermal Resistance Junction to Lead (Note 3)  
RθJA  
RθJL  
85  
35  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on PCB with 5.0mm x 5.0mm x 0.013mm thick copper pads.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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