®
MURA160
1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
WON-TOP ELECTRONICS
Pb
Features
Very Low VF 1.25V Max. @1.0A
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Surge Overload Rating to 30A Peak
Low Power Loss
Super-Fast Recovery Time
Ideally Suited for Use in High Frequency
B
D
A
F
SMPS, Inverters and As Free Wheeling Diodes
C
H
G
E
SMA/DO-214AC
Min
Mechanical Data
Dim
A
Max
2.92
4.60
1.90
0.305
5.30
2.44
0.203
1.52
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
2.29
B
4.00
C
1.27
Polarity: Cathode Band or Cathode Notch
Marking: Device Code, See Page 3
Weight: 0.064 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
0.152
4.80
E
F
2.00
G
H
0.051
0.76
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
MURA160
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
600
V
RMS Reverse Voltage
VR(RMS)
IO
420
1.0
V
A
Average Rectified Output Current
@TL = 110°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
IRM
1.25
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
150
µA
Reverse Recovery Time (Note 1)
trr
50
8
nS
pF
Typical Junction Capacitance (Note 2)
CJ
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Lead (Note 3)
RθJA
RθJL
85
35
°C/W
°C
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on PCB with 5.0mm x 5.0mm x 0.013mm thick copper pads.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
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