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MUR805F-BP PDF预览

MUR805F-BP

更新时间: 2024-11-20 20:52:15
品牌 Logo 应用领域
美微科 - MCC 局域网功效二极管
页数 文件大小 规格书
3页 355K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN

MUR805F-BP 技术参数

生命周期:Obsolete包装说明:R-PSFM-T2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.36
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:50 V最大反向电流:10 µA
最大反向恢复时间:0.05 µs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

MUR805F-BP 数据手册

 浏览型号MUR805F-BP的Datasheet PDF文件第2页浏览型号MUR805F-BP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MUR805F  
THRU  
Micro Commercial Components  
MUR860F  
Features  
Glass passivated chip  
Superfast switching time for hight efficiency  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
8 Amp Super F ast  
Glass Passivated  
Rectif ier  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Maximum Ratings  
200 to 600 Volts  
Operating Junction Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Typical Thermal Resistence : Junction to case(Rthjc)=2.5 °C /W  
ITO-220AC  
A
M
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Maximum Maximum  
B
RMS  
DC  
H
S
S
S1  
D
Voltage  
Blocking  
Voltage  
N
C
I
Reverse  
Voltage  
50V  
MUR805F MUR820F  
MUR810F MUR810F  
MUR820F MUR820F  
MUR840F MUR840F  
MUR860F MUR860F  
35V  
70V  
140V  
280V  
420V  
50V  
L
100V  
100V  
200V  
400V  
600V  
200V  
M
400V  
F
600V  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
G
E
K
Average Forward  
Current  
IF(AV)  
8.0A  
O
Peak Forward Surge  
Current  
IFSM  
150A 8.3 ms, half sine  
Maximum Forward  
Voltage Drop Per  
J
P
I
Element  
0.95V  
1.30V  
1.50V  
MUR805F-820F  
VF  
IR  
IFM = 8 A  
MUR840F  
MUR860F  
Catlode  
Anode  
ꢁꢂꢃꢉꢄꢊꢂꢇꢄꢊ  
ꢀ ꢀ ꢀ ꢀ  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
INCHES  
MM  
ꢁꢂꢃ  
A
ꢃꢂꢄ  
.396  
.250  
.134  
.102  
.067  
.043  
.068  
.100  
.018  
.018  
.047  
.583  
1.102  
.256  
.380  
.197  
ꢃꢅꢆ  
ꢃꢂꢄ  
10.06  
6.35  
ꢃꢅꢆ  
10.26  
6.55  
ꢄꢇꢈꢉ  
.404  
.258  
.142  
.110  
.075  
.051  
.073  
.104  
.030  
.030  
.055  
.598  
1.12  
.272  
.420  
.203  
B
C
3.40  
3.60  
TA = 25°C  
10uA  
400uA  
D
E
F
G
H
I
J
K
L
2.60  
1.70  
1.10  
1.75  
2.55  
0.45  
0.45  
1.20  
14.80  
2.80  
1.90  
1.30  
1.85  
2.65  
0.75  
0.75  
1.40  
15.20  
TA = 125°C  
Maximum Reverse  
Recovery Time  
Trr  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
50ns  
M
N
O
P
28.00  
6.50  
2.60  
5.00  
28.40  
6.90  
Note:1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
2.80  
5.16  
www.mccsemi.com  
Revision: A  
2013/01/01  
1 of 3  

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