Datasheet > MUR2020-28F-29CT

MUR2020-28F-29CT

更新时间： 2022-02-26 14:13:52

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
3页	1285K
描述
TO-220 Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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MUR2020-28F-29CT 数据手册

MUR2020(F)CT THRU MUR2060(F)CT

HD TO95

TO-220 Plastic-Encapsulate Diodes

Super Fast Recovery Rectifier Diode

Features

●I

20A

ITO- 220AB

TO- 220AB

●VRRM

200V-600V

●High surge current capability

Glass passivated chip

●

Applications

●Rectifier

Marking

● MUR20XX(F)CT

PIN 1

PIN 3

PIN 2

CASE

XX From 20 To 60

MUR20-(F)CT

Item

Symbol

Unit

Test Conditions

V_RRM

I_o

Repetitive Peak Reverse Voltage

Average Rectified Output Current

200

400

600

60HZ Half-sine wave, Resistance

load, Tc(Fig.1)

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

I_FSM

125

T_J

℃

-55~+150

Junction Temperature

Storage Temperature

T_STG

-55 ~ +150

Electrical Characteristics (T =25℃ Unless otherwise specified）

MUR20-(F)CT

Item

Symbol

Unit

Test Condition

V_F

I_F=10.0A

1.0

1.3

1.7

Peak Forward Voltage

Peak Reverse Current

I_RRM1

I_RRM2

T =25℃

V _RM=V_RRM

T =125℃

500

I_F=0.5A I_RM=1A

I_RR=0.25A

Reverse Recovery Time

Trr

Thermal

Resistance(Typical)

R_θ

℃/W

J-A

(Note1)

Typical Junction

Capacitance(Note2)

150

NOTE1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

NOTE2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

igh Diode Semiconductor

12 3

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