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MUR2020CT-BP-HF PDF预览

MUR2020CT-BP-HF

更新时间: 2024-02-20 17:26:21
品牌 Logo 应用领域
美微科 - MCC 整流二极管
页数 文件大小 规格书
2页 644K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB,

MUR2020CT-BP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE, PLASTIC PACKAGE-3Reach Compliance Code:compliant
风险等级:5.67其他特性:LOW LEAKAGE CURRENT
应用:ULTRA FAST RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:100 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:200 V最大反向电流:10 µA
最大反向恢复时间:0.035 µs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MUR2020CT-BP-HF 数据手册

 浏览型号MUR2020CT-BP-HF的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
MUR2010CT  
THRU  
MUR2020CT  
Features  
·
Glass passivated chip  
·
·
·
Superfast switching time for hight efficiency  
Low reverse leakage current  
High surge capacity  
20 Amp Super Fast  
Glass Passivated  
Rectifier  
100 to 200 Volts  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
TO-220AB  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
100V  
Maximum Maximum  
B
L
RMS  
DC  
M
Voltage  
Blocking  
Voltage  
C
D
A
K
MUR2010CT MUR2010CT  
MUR2020CT MUR2020CT  
70V  
140V  
100V  
200V  
E
F
PIN  
2
200V  
1
3
G
I
J
N
H
H
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
Peak Forward Surge  
Current  
Maximum Forward  
Voltage Drop Per  
Element  
IF(AV)  
20 A  
125A 8.3ms, half sine  
FM = 10 A  
TC = 95°C  
PIN 1  
PIN 3  
PIN 2  
CASE  
IFSM  
I
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
VF  
1.1V  
1.0V  
ꢀ ꢀ ꢀ ꢀ  
TJ = 25°C  
TJ = 125°C  
INCHES  
MM  
ꢁꢂꢃ  
A
B
C
D
E
ꢃꢂꢄ  
.560  
.380  
.100  
.230  
.380  
ꢃꢅꢆ  
ꢃꢂꢄ  
14.22  
9.65  
ꢃꢅꢆ  
15.88  
10.67  
3.43  
6.86  
10.67  
ꢄꢇꢈꢉ  
.625  
.420  
.135  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
2.54  
IR  
5.0uA TJ = 25°C  
.270  
.420  
5.84  
9.65  
100uA  
TJ = 100°C  
F
G
------  
.500  
.250  
.580  
------  
12.70  
6.35  
14.73  
H
I
J
K
.090  
.020  
.012  
.110  
.045  
.025  
2.29  
0.51  
0.30  
2.79  
1.14  
0.64  
Maximum Reverse  
Recovery Time  
35ns  
Trr  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
.139  
.161  
3.53  
4.09  
L
M
N
.140  
.045  
.080  
.190  
.055  
.115  
3.56  
1.14  
2.03  
4.83  
1.40  
2.92  
CJ  
Measured at  
1.0MHz, VR=4.0V  
100pF  
Typical Junction  
Capacitance  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  

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