MUR1620CTG thru MUR1660CTG
Pb
MUR1620CTG/MUR1640CTG/MUR1660CTG
Pb Free Plating Product
16.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers
TO-220AB/TO-220-3L
Unit : inch (mm)
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220AB open metal package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
.1(2.54)
.1(2.54)
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "CTDG" Suffix "CTSG"
Series
Negative
Positive
Weight: 2.2 gram approximately
Suffix "CTG"
Suffix "CTRG"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
MUR1620CTG MUR1640CTG MUR1660CTG
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
200
140
200
400
280
400
600
420
600
V
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified
16.0
175
1.3
A
A
V
IF(AV)
(Total Device 2x8A=16A)
℃
Current TC
=125
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
Maximum Instantaneous Forward Voltage
V
F
0.98
1.7
@ 8.0 A (Per Diode/Per Leg)
5.0
100
μA
μA
℃
J
=25
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
I
R
℃
J
=125
nS
pF
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
35
90
C
J
R
JC
1.5
℃
/W
Operating Junction and Storage
Temperature Range
-55 to + 150
℃
T , TSTG
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.