MUR1220DT thru MUR1260DT
Pb
MUR1220DT/MUR1240DT/MUR1260DT
Pb Free Plating Product
12.0 Ampere Heatsink Dual Doubler Polarity Fast Recovery Rectifiers
TO-220AB(TO-220-3L)
Unit:inch(mm)
Features
※ Fast switching for high efficiency
※ Low forward voltage drop
※ High current capability
※ Low reverse leakage current
※ High surge current capability
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.038(0.96)
.025(0.65)MAX
.019(0.50)
Mechanical Data
.1(2.54)
.1(2.54)
※ Case: Open Heatsink Package TO-220AB
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
Case
Case
Case
Case
※ Weight: 2.2 gram approximately
Doubler
Series
Negative
Positive
Common Cathode
Common Anode
Suffix "AT"
Tandem Polarity
Suffix "ST"
Tandem Polarity
Suffix "DT"
Suffix "CT"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
UNIT
MUR1220DT MUR1240DT MUR1260DT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current Tc=100℃
12.0
125
1.3
IF(AV)
IFSM
VF
A
A
V
(Total Device 2x6.0A=12.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)
Maximum Instantaneous Forward Voltage
@6.0A
0.98
1.7
(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25℃
5.0
100
μA
μA
IR
℃
At Rated DC Blocking Voltage @TJ=125
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
35
65
Trr
CJ
nS
pF
1.5
RθJC
℃/W
Operating Junction and Storage
Temperature Range
-55 to +150
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.