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MUR1260FCTD PDF预览

MUR1260FCTD

更新时间: 2024-11-27 00:55:27
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THINKISEMI /
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2页 279K
描述
12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

MUR1260FCTD 数据手册

 浏览型号MUR1260FCTD的Datasheet PDF文件第2页 
MUR1220FCT thru MUR1260FCT  
MUR1220FCT/MUR1240FCT/MUR1260FCT  
Pb Free Plating Product  
12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers  
ITO-220AB(TO-220F-3L)  
Unit:inch(mm)  
Features  
.189(4.8)  
.165(4.2)  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
.130(3.3)  
.114(2.9)  
Application  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
.1  
Case: Full Plastic Isolated Package ITO-220AB  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
(2.55)  
(2.55)  
Case  
Case  
Case  
Case  
Weight: 2.0 gram approximately  
Doubler  
Series  
Negative  
Positive  
Tandem Polarity  
Suffix "CTD"  
Tandem Polarity  
Suffix "CTS"  
Common Cathode  
Suffix "CT"  
Common Anode  
Suffix "CTR"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
MUR1220FCT  
MUR1220FCTR  
MUR1220FCTD  
MUR1220FCTS  
MUR1240FCT  
MUR1240FCTR  
MUR1240FCTD  
MUR1240FCTS  
MUR1260FCT  
MUR1260FCTR  
MUR1260FCTD  
MUR1260FCTS  
PARAMETER  
SYMBOL  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current Tc=100°C  
12.0  
100  
1.3  
IF(AV)  
IFSM  
VF  
A
A
V
(Total Device 2x6.0A=12.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)  
Maximum Instantaneous Forward Voltage  
@6.0A  
0.98  
1.7  
(Per Diode/Per Leg)  
Maximum DC Reverse Current @TJ=25°C  
At Rated DC Blocking Voltage @TJ=125°C  
5.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
35  
65  
Trr  
CJ  
nS  
pF  
3.0  
RθJC  
°C/W  
Operating Junction and Storage  
Temperature Range  
-55 to +150  
TJ,TSTG  
°C  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  

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