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MUR1260GD PDF预览

MUR1260GD

更新时间： 2024-11-10 12:57:39
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 233K
描述
12.0 Ampere Heatsink Dual Doubler Polarity Fast Recovery Rectifiers

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MUR1260GD 数据手册

 浏览型号MUR1260GD的Datasheet PDF文件第2页 
MUR1220GD thru MUR1260GD  
MUR1220GD/MUR1240GD/MUR1260GD  
Pb Free Plating Product  
12.0 Ampere Heatsink Dual Doubler Polarity Fast Recovery Rectifiers  
TO-220AB(TO-220-3L)  
Unit:inch(mm)  
Features  
※ Fast switching for high efficiency  
※ Low forward voltage drop  
※ High current capability  
※ Low reverse leakage current  
※ High surge current capability  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Application  
※ Automotive Inverters and Solar Inverters  
※ Car Audio Amplifiers and Sound Device Systems  
※ Plating Power Supply,Motor Control,UPS and SMPS etc.  
.038(0.96)  
.025(0.65)MAX  
.019(0.50)  
Mechanical Data  
.1(2.54)  
.1(2.54)  
※ Case: Open Heatsink Package TO-220AB  
※ Epoxy: UL 94V-0 rate flame retardant  
※ Terminals: Solderable per MIL-STD-202 method 208  
※ Polarity: As marked on diode body  
※ Mounting position: Any  
Case  
Case  
Case  
Case  
※ Weight: 2.2 gram approximately  
Doubler  
Tandem Polarity  
Suffix "GD"  
Series  
Tandem Polarity  
Suffix "GS"  
Negative  
Common Anode  
Suffix "GA"  
Positive  
Common Cathode  
Suffix "GC"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25℃ ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
PARAMETER  
SYMBOL  
UNIT  
MUR1220GD MUR1240GD MUR1260GD  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current Tc=100℃  
12.0  
125  
1.3  
IF(AV)  
IFSM  
VF  
A
A
V
(Total Device 2x6.0A=12.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)  
Maximum Instantaneous Forward Voltage  
@6.0A  
0.98  
1.7  
(Per Diode/Per Leg)  
Maximum DC Reverse Current @TJ=25℃  
5.0  
100  
μA  
μA  
IR  
℃
At Rated DC Blocking Voltage @TJ=125  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
35  
65  
Trr  
CJ  
nS  
pF  
1.5  
RθJC  
℃/W  
Operating Junction and Storage  
Temperature Range  
-55 to +150  
TJ,TSTG  
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
12

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