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MUR1260GD PDF预览

MUR1260GD

更新时间: 2024-09-21 12:57:39
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 233K
描述
12.0 Ampere Heatsink Dual Doubler Polarity Fast Recovery Rectifiers

MUR1260GD 数据手册

 浏览型号MUR1260GD的Datasheet PDF文件第2页 
MUR1220GD thru MUR1260GD  
MUR1220GD/MUR1240GD/MUR1260GD  
Pb Free Plating Product  
12.0 Ampere Heatsink Dual Doubler Polarity Fast Recovery Rectifiers  
TO-220AB(TO-220-3L)  
Unit:inch(mm)  
Features  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Application  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
.038(0.96)  
.025(0.65)MAX  
.019(0.50)  
Mechanical Data  
.1(2.54)  
.1(2.54)  
Case: Open Heatsink Package TO-220AB  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
Case  
Case  
Case  
Case  
Weight: 2.2 gram approximately  
Doubler  
Tandem Polarity  
Suffix "GD"  
Series  
Tandem Polarity  
Suffix "GS"  
Negative  
Common Anode  
Suffix "GA"  
Positive  
Common Cathode  
Suffix "GC"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
PARAMETER  
SYMBOL  
UNIT  
MUR1220GD MUR1240GD MUR1260GD  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current Tc=100  
12.0  
125  
1.3  
IF(AV)  
IFSM  
VF  
A
A
V
(Total Device 2x6.0A=12.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)  
Maximum Instantaneous Forward Voltage  
@6.0A  
0.98  
1.7  
(Per Diode/Per Leg)  
Maximum DC Reverse Current @TJ=25  
5.0  
100  
μA  
μA  
IR  
At Rated DC Blocking Voltage @TJ=125  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
35  
65  
Trr  
CJ  
nS  
pF  
1.5  
RθJC  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to +150  
TJ,TSTG  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  

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