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MUR130 PDF预览

MUR130

更新时间: 2024-11-11 14:51:19
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1744K
描述
DO-41

MUR130 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTTDD  
41 Plastic-Encapsulate Diodes  
Super Fast Recovery Rectifier Diodes  
MUR105 THRU MUR1100  
Features  
● IF(AV)  
1.0A  
DO-41  
● VRRM  
50V-1000V  
● High surge current capability  
Polarity: Color band denotes cathode  
Applications  
● Rectifier  
Marking  
MUR1XX  
:
X From 05 To 100  
Limiting Values(Absolute Maximum Rating)  
MUR  
Item  
Symbol Unit  
Test Conditions  
140  
105 110 120 130  
160 180  
1100  
VRRM  
V
V
1000  
300 400 600 800  
Repetitive Peak Reverse Voltage  
MaximumRMS Voltage  
50  
100 200  
V
700  
560  
RMS  
35 70 140 210 280 420  
60Hz Half-sine wave  
Resistance loadTa=75℃  
Average Forward Current  
1.0  
IF(AV)  
A
A
Surge(Non-repetitive)Forward  
Current  
60Hz Half-sine wave,  
1 cycleTa=25℃  
30  
IFSM  
Operation Junction and  
Storage Temperature Range  
TJ,TSTG  
-55 ~ +150  
Electrical Characteristics (T=25Unless otherwise specified  
MUR  
Symbol  
Unit  
Test Condition  
Item  
105 110 120 130 140 160  
180  
1100  
VFM  
IRRM2  
IRRM1  
1.28  
0.95  
IFM=1.0A  
Peak Forward Voltage  
V
1.7  
T =25  
5
a
Peak Reverse Current  
VRM=VRRM  
μA  
T =125  
a
50  
Reverse Recovery time  
t
ns  
rr  
IF=0.5A,IR=1.0A,Irr =0.25A  
35  
50  
75  
Between junction and ambient  
Rθ  
55  
J-A  
Thermal  
Resistance(Typical)  
/  
W
25  
Rθ  
Between junction and lead  
J-L  
Notes:  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm) copper  
pad areas  
www.jscj-elec.com  
1
Rev. - 1.1  

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