MTP8N50E

更新时间： 2024-10-01 22:24:59

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
6页	162K
描述
TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM

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SEMICONDUCTOR TECHNICAL DATA

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition, this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. This new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for low

voltage, high speed switching applications in power supplies,

converters, PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and commutating safe

operating areas are critical and offer additional safety margin

against unexpected voltage transients.

8.0 AMPERES

500 VOLTS

= 0.8 OHM

DS(on)

•

Robust High Voltage Termination

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable

to a Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V

Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO-220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

500

Unit

Vdc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 M

)

DGR

500

Gate–to–Source Voltage – Continuous

Gate–to–Source Voltage – Non–repetitive (tp ≤ 10 ms)

±20

±40

Vdc

Vpk

GSM

Drain Current — Continuous @ T = 25°C

8.0

5.0

Adc

Apk

Drain Current — Continuous @ T = 100°C

Drain Current — Single Pulse (tp ≤ 10 s)

Total Power Dissipation @ T = 25°C

Derate above 25°C

125

1.0

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 150

510

°C

Single Pulse Drain–to–Source Avalanche Energy – STARTING T = 25°C

= 25 Vdc, V

= 10 Vdc, PEAK I = 8.0 Apk, L = 16 mH, R = 25

)

Thermal Resistance

– Junction–to–Case

– Junction–to–Ambient

1.0

62.5

°C/W

°C

Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 sec.

260

This document contains information on a new product. Specifications and information herein are subject to change without notice.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6

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MTP8N50E 替代型号

型号	品牌	替代类型	描述	数据表
STP9NB50	STMICROELECTRONICS	功能相似	N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET
2SK894	TOSHIBA	功能相似	2SK894

与MTP8N50E相关器件

型号	品牌	获取价格	描述	数据表
MTP8N50E16	MOTOROLA	获取价格	8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP8N50EA	MOTOROLA	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal
MTP8N50EA16A	MOTOROLA	获取价格	8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP8N50EAF	MOTOROLA	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal
MTP8N50EAJ	MOTOROLA	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal
MTP8N50EC	MOTOROLA	获取价格	8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP8N50ED1	MOTOROLA	获取价格	8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP8N50EL	MOTOROLA	获取价格	8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP8N50EN	MOTOROLA	获取价格	8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP8N50ES	MOTOROLA	获取价格	8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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