MTP8N50EWC

更新时间： 2024-11-28 13:11:55

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摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管开关脉冲局域网
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SEMICONDUCTOR TECHNICAL DATA

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition, this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. This new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for low

voltage, high speed switching applications in power supplies,

converters, PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and commutating safe

operating areas are critical and offer additional safety margin

against unexpected voltage transients.

8.0 AMPERES

500 VOLTS

= 0.8 OHM

DS(on)

•

Robust High Voltage Termination

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable

to a Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V

Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO-220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

500

Unit

Vdc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 M

)

DGR

500

Gate–to–Source Voltage – Continuous

Gate–to–Source Voltage – Non–repetitive (tp ≤ 10 ms)

±20

±40

Vdc

Vpk

GSM

Drain Current — Continuous @ T = 25°C

8.0

5.0

Adc

Apk

Drain Current — Continuous @ T = 100°C

Drain Current — Single Pulse (tp ≤ 10 s)

Total Power Dissipation @ T = 25°C

Derate above 25°C

125

1.0

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 150

510

°C

Single Pulse Drain–to–Source Avalanche Energy – STARTING T = 25°C

= 25 Vdc, V

= 10 Vdc, PEAK I = 8.0 Apk, L = 16 mH, R = 25

)

Thermal Resistance

– Junction–to–Case

– Junction–to–Ambient

1.0

62.5

°C/W

°C

Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 sec.

260

This document contains information on a new product. Specifications and information herein are subject to change without notice.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6

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与MTP8N50EWC相关器件

型号	品牌	获取价格	描述	数据表
MTP8N60	NJSEMI	获取价格	Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220
MTP8P08	MOTOROLA	获取价格	POWER FIELD EFFECT TRANSISTOR
MTP8P10	FREESCALE	获取价格	POWER FIELD EFFECT TRANSISTOR
MTP8P10	MOTOROLA	获取价格	POWER FIELD EFFECT TRANSISTOR
MTP8P1016	MOTOROLA	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal
MTP8P10A	MOTOROLA	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal
MTP8P10A16A	MOTOROLA	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal
MTP8P10AF	MOTOROLA	获取价格	8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP8P10AJ	MOTOROLA	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal
MTP8P10C	MOTOROLA	获取价格	暂无描述

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