MTP6N60EUA

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品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管开关脉冲局域网
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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

6.0 AMPERES

600 VOLTS

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition, this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

= 1.2 OHMS

DS(on)

•

Robust High Voltage Termination

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V

Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

600

Unit

Vdc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

600

Gate–to–Source Voltage — Continuous

— Non–Repetitive (t ≤ 10 ms)

±20

±40

Vdc

Vpk

GSM

Drain Current — Continuous

— Continuous @ 100°C

— Single Pulse (t ≤ 10 µs)

6.0

4.6

Adc

Apk

Total Power Dissipation

Derate above 25°C

125

1.0

Watts

W/°C

Operating and Storage Temperature Range

T , T

J stg

–55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 100 Vdc, V

= 10 Vdc, I = 2.0 Apk, L = 10 mH, R = 25 Ω)

GS L G

405

Thermal Resistance — Junction to Case°

— Junction to Ambient°

1.0

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1997

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
MTP6N60EW	MOTOROLA	获取价格	暂无描述
MTP6N60EWC	MOTOROLA	获取价格	6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP6P20E	MOTOROLA	获取价格	TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 1.0 OHM
MTP6P20E	ONSEMI	获取价格	是功率MOSFET设计，高能量的雪崩和减刑模式。
MTP6P20E16	MOTOROLA	获取价格	Power Field-Effect Transistor, 6A I(D), 200V, 1ohm, 1-Element, P-Channel, Silicon, Metal-o
MTP6P20EA	MOTOROLA	获取价格	6A, 200V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP6P20EA16A	MOTOROLA	获取价格	Power Field-Effect Transistor, 6A I(D), 200V, 1ohm, 1-Element, P-Channel, Silicon, Metal-o
MTP6P20EAF	MOTOROLA	获取价格	6A, 200V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP6P20EAJ	MOTOROLA	获取价格	6A, 200V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP6P20EC	MOTOROLA	获取价格	6A, 200V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

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