MTP6P20EWC

更新时间： 2024-01-27 02:49:19

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摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管开关脉冲局域网
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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

P–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

6.0 AMPERES

200 VOLTS

This advanced TMOS E–FET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain–to–source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor

controls, these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected

voltage transients.

= 1.0 OHM

DS(on)

•

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain–Source Voltage

DSS

200

Vdc

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

200

Vdc

Gate–Source Voltage — Continuous

— Non–Repetitive (t ≤ 10 ms)

± 20

± 40

Vdc

Vpk

GSM

Drain Current — Continuous

— Continuous @ 100°C

— Single Pulse (t ≤ 10 µs)

6.0

3.9

Adc

Apk

Total Power Dissipation

Derate above 25°C

0.6

Watts

W/°C

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

T , T

stg

–55 to 150

180

°C

= 25 Vdc, V = 10 Vdc, I = 6.0 Apk, L = 10 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

— Junction to Ambient

1.67

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1995

12 3 4 5 6 7 8

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与MTP6P20EWC相关器件

型号	品牌	获取价格	描述	数据表
MTP71040L	MOTOROLA	获取价格	60A, 100V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP7405S6	CYSTEKEC	获取价格	P-Channel Enhancement Mode MOSFET
MTP7405S6-0-T1-G	CYSTEKEC	获取价格	P-Channel Enhancement Mode MOSFET
MTP75	NELLSEMI	获取价格	Glass Passivated Three-Phase Bridge Rectifier, 75A
MTP75_17	NELLSEMI	获取价格	Three-Phase Bridge Rectifier
MTP7508	NELLSEMI	获取价格	Three-Phase Bridge Rectifier
MTP7508D	NELLSEMI	获取价格	Three-Phase Bridge Rectifier
MTP7510	NELLSEMI	获取价格	Three-Phase Bridge Rectifier
MTP7510D	NELLSEMI	获取价格	Three-Phase Bridge Rectifier
MTP7512	NELLSEMI	获取价格	Three-Phase Bridge Rectifier

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