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MTP7N20A PDF预览

MTP7N20A

更新时间： 2024-01-22 16:40:42
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 226K
描述
7A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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MTP7N20A 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.74外壳连接：DRAIN
配置：SINGLE最小漏源击穿电压：200 V
最大漏极电流 (ID)：7 A最大漏源导通电阻：0.7 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：75 W认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管元件材料：SILICON
Base Number Matches：1

MTP7N20A 数据手册

 浏览型号MTP7N20A的Datasheet PDF文件第2页浏览型号MTP7N20A的Datasheet PDF文件第3页浏览型号MTP7N20A的Datasheet PDF文件第4页浏览型号MTP7N20A的Datasheet PDF文件第5页浏览型号MTP7N20A的Datasheet PDF文件第6页浏览型号MTP7N20A的Datasheet PDF文件第7页 
Order this document  
by MTP7N20E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
N–Channel Enhancement–Mode Silicon Gate  
TMOS POWER FET  
7.0 AMPERES  
200 VOLTS  
This advanced TMOS E–FET is designed to withstand high  
energy in the avalanche and commutation modes. The new energy  
efficient design also offers a drain–to–source diode with a fast  
recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor  
controls, these devices are particularly well suited for bridge circuits  
where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected  
voltage transients.  
R
= 0.70 OHMS  
DS(on)  
D
•
•
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a Discrete  
Fast Recovery Diode  
•
•
Diode is Characterized for Use in Bridge Circuits  
G
I
and V Specified at Elevated Temperature  
DSS  
DS(on)  
S
CASE 221A–06, Style 5  
TO–220AB  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
200  
Unit  
Vdc  
Vdc  
Drain–to–Source Voltage  
V
DSS  
Drain–to–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
200  
Gate–to–Source Voltage — Continuous  
— Non–Repetitive (t ≤ 10 ms)  
V
±20  
±40  
Vdc  
Vpk  
GS  
V
GSM  
p
Drain Current — Continuous  
— Continuous @ 100°C  
— Single Pulse (t ≤ 10 µs)  
I
I
7.0  
3.8  
21  
Adc  
Apk  
D
D
I
p
DM  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
50  
0.4  
Watts  
W/°C  
C
Operating and Storage Temperature Range  
T , T  
J stg  
–55 to 150  
°C  
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 80 Vdc, V = 10 Vdc, Peak I = 7.0 Adc, L = 10 mH, R = 25 Ω)  
74  
GS L G  
Thermal Resistance — Junction to Case°  
— Junction to Ambient°  
R
R
2.5°  
62.5°  
°C/W  
°C  
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
260  
L
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995  
12345678

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 		TMOS POWER FET 7.0 AMPERES 200 VOLTS RDS(on) = 0.70 OHMS
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 		暂无描述
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 		7A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP7N20T MOTOROLA

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 		7A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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