MTP7N20N

更新时间： 2024-01-03 09:03:34

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	226K
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MTP7N20N 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

7.0 AMPERES

200 VOLTS

This advanced TMOS E–FET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain–to–source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor

controls, these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected

voltage transients.

= 0.70 OHMS

DS(on)

•

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

200

Unit

Vdc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

200

Gate–to–Source Voltage — Continuous

— Non–Repetitive (t ≤ 10 ms)

±20

±40

Vdc

Vpk

GSM

Drain Current — Continuous

— Continuous @ 100°C

— Single Pulse (t ≤ 10 µs)

7.0

3.8

Adc

Apk

Total Power Dissipation @ T = 25°C

Derate above 25°C

0.4

Watts

W/°C

Operating and Storage Temperature Range

T , T

J stg

–55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 80 Vdc, V = 10 Vdc, Peak I = 7.0 Adc, L = 10 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case°

— Junction to Ambient°

2.5°

62.5°

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1995

12 3 4 5 6 7 8

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与MTP7N20N相关器件

型号	品牌	获取价格	描述	数据表
MTP7N20S	MOTOROLA	获取价格	7A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP7N20T	MOTOROLA	获取价格	7A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP7N20U2	MOTOROLA	获取价格	7A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP7N20UA	MOTOROLA	获取价格	7A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP7N20W	MOTOROLA	获取价格	7A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP7N20WC	MOTOROLA	获取价格	7A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP7N60	NJSEMI	获取价格	Trans MOSFET N-CH 200V 7A 3-Pin(3+Tab) TO-220 Rail
MTP7P05	MOTOROLA	获取价格	Power Field-Effect Transistor, 7A I(D), 50V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-
MTP7P06	MOTOROLA	获取价格	POWER FIELD EFFECT TRANSISTOR
MTP7P0616	MOTOROLA	获取价格	7A, 60V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

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