Datasheet > MTP7405S6

MTP7405S6

更新时间： 2024-09-29 01:16:51

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	395K
描述
P-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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MTP7405S6 数据手册

Spec. No. : C041S6

Issued Date : 2017.04.24

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 9

P-Channel Enhancement Mode MOSFET

BVDSS

ID@VGS=-10V, TA=25°C

RDSON@VGS=-10V, ID=-1.4A

RDSON@VGS=-4.5V, ID=-1.2A

RDSON@VGS=-2.5V, ID=-1A

-30V

-1.4A

MTP7405S6

90mΩ(typ)

103mΩ(typ)

132mΩ(typ)

Features

• Low on-resistance

• High speed switching

• Low-voltage drive(-2.5V)

• Pb-free lead plating and halogen-free package

Equivalent Circuit

Outline

MTP7405S6

SOT-363

G : Gate S : Source D : Drain

Ordering Information

Device

Package

SOT-363

(Pb-free lead plating and halogen-free package)

Shipping

3000 pcs / Tape & Reel

MTP7405S6-0-T1-G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T1 : 3000 pcs / tape & reel, 7” reel

Product rank, zero for no rank products

Product name

MTP7405S6

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

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