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MTP6P20E PDF预览

MTP6P20E

更新时间： 2024-02-13 19:41:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
9页 106K
描述
是功率MOSFET设计，高能量的雪崩和减刑模式。

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中文翻译

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MTP6P20E 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84外壳连接：DRAIN
配置：SINGLE最小漏源击穿电压：200 V
最大漏极电流 (ID)：6 A最大漏源导通电阻：1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：P-CHANNEL
功耗环境最大值：75 W认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管元件材料：SILICON

MTP6P20E 数据手册

 浏览型号MTP6P20E的Datasheet PDF文件第2页浏览型号MTP6P20E的Datasheet PDF文件第3页浏览型号MTP6P20E的Datasheet PDF文件第4页浏览型号MTP6P20E的Datasheet PDF文件第5页浏览型号MTP6P20E的Datasheet PDF文件第6页浏览型号MTP6P20E的Datasheet PDF文件第7页 
MTP6P20E  
Preferred Device  
Power MOSFET  
6 Amps, 200 Volts  
P–Channel TO–220  
This Power MOSFET is designed to withstand high energy in the  
avalanche and commutation modes. The energy efficient design also  
offers a drain–to–source diode with a fast recovery time. Designed for  
low voltage, high speed switching applications in power supplies,  
converters and PWM motor controls, these devices are particularly  
well suited for bridge circuits where diode speed and commutating  
safe operating areas are critical and offer additional safety margin  
against unexpected voltage transients.  
http://onsemi.com  
6 AMPERES  
200 VOLTS  
R
= 1 Ω  
DS(on)  
• Avalanche Energy Specified  
P–Channel  
• Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
D
• Diode is Characterized for Use in Bridge Circuits  
• I  
and V Specified at Elevated Temperature  
DSS  
DS(on)  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
S
Rating  
Drain–Source Voltage  
Symbol  
Value  
Unit  
V
DSS  
200  
Vdc  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
V
DGR  
200  
Vdc  
MARKING DIAGRAM  
GS  
& PIN ASSIGNMENT  
Gate–Source Voltage  
– Continuous  
4
V
± 20  
± 40  
Vdc  
Vpk  
GS  
4
Drain  
– Non–Repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current – Continuous  
I
I
6.0  
3.9  
21  
Adc  
Apk  
D
D
– Continuous @ 100°C  
– Single Pulse (t ≤ 10 µs)  
I
TO–220AB  
CASE 221A  
STYLE 5  
p
DM  
Total Power Dissipation  
Derate above 25°C  
P
D
75  
0.6  
Watts  
W/°C  
MTP6P20E  
LLYWW  
Operating and Storage Temperature  
Range  
T , T  
stg  
–55 to  
150  
°C  
J
1
Gate  
3
1
2
Source  
3
Single Pulse Drain–to–Source Avalanche  
E
AS  
180  
mJ  
2
Energy – Starting T = 25°C  
J
Drain  
(V  
= 25 Vdc, V  
= 10 Vdc,  
DD  
GS  
= 6.0 Apk, L = 10 mH, R = 25 Ω)  
I
L
G
MTP6P20E  
LL  
Y
WW  
= Device Code  
= Location Code  
= Year  
Thermal Resistance  
– Junction to Case  
– Junction to Ambient  
°C/W  
°C  
R
θJC  
R
θJA  
1.67  
62.5  
= Work Week  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10  
seconds  
T
L
260  
ORDERING INFORMATION  
Device  
MTP6P20E  
Package  
Shipping  
50 Units/Rail  
TO–220AB  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 1  
MTP6P20E/D  
1234567...9

中文翻译

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MTP6P20EA MOTOROLA

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MTP6P20EA16A MOTOROLA

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MTP6P20EAF MOTOROLA

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 		6A, 200V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP6P20EAJ MOTOROLA

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 		6A, 200V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP6P20EC MOTOROLA

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 		6A, 200V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP6P20ED1 MOTOROLA

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 		6A, 200V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP6P20EL MOTOROLA

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 		6A, 200V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP6P20EN MOTOROLA

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 		Power Field-Effect Transistor, 6A I(D), 200V, 1ohm, 1-Element, P-Channel, Silicon, Metal-o
MTP6P20ES MOTOROLA

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 		6A, 200V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

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