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MTP3055ELW PDF预览

MTP3055ELW

更新时间： 2024-01-03 05:09:38
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
8页 163K
描述
12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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MTP3055ELW 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：TO-220, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：12 A
最大漏极电流 (ID)：12 A最大漏源导通电阻：0.18 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：48 W
最大脉冲漏极电流 (IDM)：42 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MTP3055ELW 数据手册

 浏览型号MTP3055ELW的Datasheet PDF文件第2页浏览型号MTP3055ELW的Datasheet PDF文件第3页浏览型号MTP3055ELW的Datasheet PDF文件第4页浏览型号MTP3055ELW的Datasheet PDF文件第6页浏览型号MTP3055ELW的Datasheet PDF文件第7页浏览型号MTP3055ELW的Datasheet PDF文件第8页 
1000  
100  
12  
10  
60  
50  
40  
30  
20  
V
= 30 V  
= 12 A  
= 10 V  
= 25°C  
DD  
QT  
I
V
T
D
GS  
J
V
GS  
Q1  
Q2  
8
6
4
2
0
t
r
t
t
d(off)  
t
f
10  
1
d(on)  
I
T
= 12 A  
= 25°C  
D
J
10  
0
Q3  
V
DS  
1
10  
, GATE RESISTANCE (OHMS)  
G
100  
0
1
2
3
4
5
6
7
8
9
10 11 12 13  
Q , TOTAL CHARGE (nC)  
R
T
Figure 8. Gate–To–Source and Drain–To–Source  
Voltage versus Total Charge  
Figure 9. Resistive Switching Time  
Variation versus Gate Resistance  
DRAIN–TO–SOURCE DIODE CHARACTERISTICS  
0.13  
12  
dIS/dt = 100 A/µs  
V
T
= 0 V  
GS  
= 25  
V
T
= 25 V  
°C  
DD  
= 25  
J
10  
8
°C  
0.12  
0.11  
0.10  
0.09  
0.08  
J
6
4
2
0
0
2
4
6
8
10  
12  
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0  
I
, SOURCE CURRENT (AMPS)  
V
, SOURCE–TO–DRAIN VOLTAGE (VOLTS)  
S
SD  
Figure 10. Stored Charge  
Figure 11. Diode Forward Voltage versus Current  
SAFE OPERATING AREA  
The Forward Biased Safe Operating Area curves define  
the maximum simultaneous drain–to–source voltage and  
drain current that a transistor can handle safely when it is for-  
ward biased. Curves are based upon maximum peak junc-  
able operation, the stored energy from circuit inductance dis-  
sipated in the transistor while in avalanche must be less than  
the rated limit and adjusted for operating conditions differing  
from those specified. Although industry practice is to rate in  
terms of energy, avalanche energy capability is not a  
constant. The energy rating decreases non–linearly with an  
increase of peak current in avalanche and peak junction tem-  
perature.  
tion temperature and a case temperature (T ) of 25°C. Peak  
C
repetitive pulsed power limits are determined by using the  
thermal response data in conjunction with the procedures  
discussed in AN569, “Transient Thermal Resistance–General  
Data and Its Use.”  
Although many E–FETs can withstand the stress of drain–  
to–source avalanche at currents up to rated pulsed current  
Switching between the off–state and the on–state may tra-  
verse any load line provided neither rated peak current (I  
)
DM  
) is exceeded and the transition time  
(I  
), the energy rating is specified at rated continuous cur-  
DM  
nor rated voltage (V  
DSS  
rent (I ), in accordance with industry custom. The energy rat-  
D
(t ,t ) do not exceed 10 µs. In addition the total power aver-  
r f  
ing must be derated for temperature as shown in the  
accompanying graph (Figure 13). Maximum energy at cur-  
aged over a complete switching cycle must not exceed  
(T  
– T )/(R ).  
J(MAX)  
C
θJC  
rents below rated continuous I can safely be assumed to  
A Power MOSFET designated E–FET can be safely used  
D
in switching circuits with unclamped inductive loads. For reli-  
Motorola TMOS Power MOSFET Transistor Device Data  
equal the values indicated.  
5
12345678

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MTP3055ET MOTOROLA 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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MTP3055EU MOTOROLA Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Meta

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MTP3055EU2 MOTOROLA 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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