MTP20N20EN

更新时间： 2024-01-13 02:03:18

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
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8页	205K
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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

20 AMPERES

200 VOLTS

This advanced TMOS E–FET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain–to–source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor

controls, these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected

voltage transients.

= 0.16 OHM

DS(on)

•

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

200

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

200

Gate–Source Voltage — Continuous

— Non–Repetitive (t ≤ 10 ms)

± 20

± 40

Vdc

Vpk

GSM

Drain — Continuous

— Continuous @ 100°C

— Single Pulse (t ≤ 10 µs)

Adc

Apk

Total Power Dissipation

Derate above 25°C

125

1.0

Watts

W/°C

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

T , T

stg

–55 to 150

600

°C

= 25 Vdc, V = 10 Vdc, I = 20 Apk, L = 3.0 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

— Junction to Ambient

1.00

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1995

12 3 4 5 6 7 8

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与MTP20N20EN相关器件

型号	品牌	获取价格	描述	数据表
MTP20N20ES	MOTOROLA	获取价格	暂无描述
MTP20N20ET	MOTOROLA	获取价格	20A, 200V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP20N20EU	MOTOROLA	获取价格	20 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP20N20EU2	MOTOROLA	获取价格	20 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP20N20EUA	MOTOROLA	获取价格	Power Field-Effect Transistor, 20A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Met
MTP20N20EW	MOTOROLA	获取价格	20 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP20N20EWC	MOTOROLA	获取价格	20 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP20P06	MOTOROLA	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal
MTP226K015P1A	CDE	获取价格	CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 15V, 22uF, THROUGH HOLE MOUNT, AXIAL LEADED
MTP2301N3	CYSTEKEC	获取价格	20V P-CHANNEL Enhancement Mode MOSFET

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