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MTP2311V8 PDF预览

MTP2311V8

更新时间: 2024-11-06 00:31:19
品牌 Logo 应用领域
全宇昕 - CYSTEKEC /
页数 文件大小 规格书
9页 331K
描述
P-Channel Enhancement Mode MOSFET

MTP2311V8 数据手册

 浏览型号MTP2311V8的Datasheet PDF文件第2页浏览型号MTP2311V8的Datasheet PDF文件第3页浏览型号MTP2311V8的Datasheet PDF文件第4页浏览型号MTP2311V8的Datasheet PDF文件第5页浏览型号MTP2311V8的Datasheet PDF文件第6页浏览型号MTP2311V8的Datasheet PDF文件第7页 
Spec. No. : C733V8  
Issued Date : 2013.06.24  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/9  
P-Channel Enhancement Mode MOSFET  
BVDSS  
ID  
RDSON@VGS=10V, ID=-3A  
-60V  
-11A  
63mΩ(typ)  
MTP2311V8  
RDSON@VGS=-4.5V, ID=-2A  
78mΩ(typ)  
Description  
The MTP2311V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best  
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.  
Features  
Simple drive requirement  
Low on-resistance  
Fast switching speed  
Pb-free lead plating and halogen-free package  
Equivalent Circuit  
Outline  
MTP2311V8  
DFN3×3  
Pin 1  
GGate SSource DDrain  
Ordering Information  
Device  
Package  
Shipping  
DFN3×3  
MTP2311V8-0-T1-G  
3000 pcs / Tape & Reel  
(Pb-free lead plating and halogen-free package)  
MTP2311V8  
CYStek Product Specification  

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