MTP23P06AJ

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摩托罗拉 - MOTOROLA		/
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by MTP23P06V/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

P–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

23 AMPERES

60 VOLTS

TMOS V is a new technology designed to achieve an on–resis-

tance area product about one–half that of standard MOSFETs. This

new technology more than doubles the present cell density of our

50 and 60 volt TMOS devices. Just as with our TMOS E–FET

designs, TMOS V is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and

power motor controls, these devices are particularly well suited for

bridge circuits where diode speed and commutating safe operating

areas are critical and offer additional safety margin against

unexpected voltage transients.

= 0.120 OHM

DS(on)

New Features of TMOS V

•

On–resistance Area Product about One–half that of Standard

MOSFETs with New Low Voltage, Low R Technology

DS(on)

Faster Switching than E–FET Predecessors

•

Features Common to TMOS V and TMOS E–FETS

•

Avalanche Energy Specified

and V Specified at Elevated Temperature

Static Parameters are the Same for both TMOS V and

TMOS E–FET

CASE 221A–06, Style 5

TO–220AB

DSS

DS(on)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

DSS

Vdc

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

Gate–to–Source Voltage — Continuous

Gate–to–Source Voltage — Non–repetitive (t ≤ 10 ms)

± 15

± 25

Vdc

Vpk

GSM

Drain Current — Continuous @ 25°C

Drain Current — Continuous @ 100°C

Adc

Drain Current — Single Pulse (t ≤ 10 µs)

Apk

Total Power Dissipation @ 25°C

Derate above 25°C

0.60

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 175

794

°C

Single Pulse Drain–to–Source Avalanche Energy — STARTING T = 25°C

= 25 Vdc, V = 10 Vdc, PEAK I = 23 Apk, L = 3.0 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

θJC

θJA

1.67

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seconds

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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与MTP23P06AJ相关器件

型号	品牌	获取价格	描述	数据表
MTP23P06L	MOTOROLA	获取价格	23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP23P06N	MOTOROLA	获取价格	Power Field-Effect Transistor, 23A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Meta
MTP23P06S	MOTOROLA	获取价格	23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP23P06T	MOTOROLA	获取价格	23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP23P06U	MOTOROLA	获取价格	23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP23P06U2	MOTOROLA	获取价格	23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP23P06UA	MOTOROLA	获取价格	Power Field-Effect Transistor, 23A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Meta
MTP23P06V	ONSEMI	获取价格	Power MOSFET 23 Amps, 60 Volts
MTP23P06V	MOTOROLA	获取价格	TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM
MTP23P06VG	ONSEMI	获取价格	Power MOSFET 23 Amps, 60 Volts

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