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MTP23P06VG PDF预览

MTP23P06VG

更新时间： 2024-02-25 18:15:33
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 74K
描述
Power MOSFET 23 Amps, 60 Volts

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中文翻译

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MTP23P06VG 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.74外壳连接：DRAIN
配置：SINGLE最小漏源击穿电压：60 V
最大漏极电流 (ID)：23 A最大漏源导通电阻：0.12 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：P-CHANNEL
功耗环境最大值：125 W认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管元件材料：SILICON
Base Number Matches：1

MTP23P06VG 数据手册

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MTP23P06V  
Preferred Device  
Power MOSFET  
23 Amps, 60 Volts  
P−Channel TO−220  
This Power MOSFET is designed to withstand high energy in the  
avalanche and commutation modes. Designed for low voltage, high  
speed switching applications in power supplies, converters and power  
motor controls, these devices are particularly well suited for bridge  
circuits where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected voltage  
transients.  
http://onsemi.com  
23 AMPERES, 60 VOLTS  
RDS(on) = 120 mW  
P−Channel  
D
Features  
• Avalanche Energy Specified  
• I  
and V  
Specified at Elevated Temperature  
DSS  
DS(on)  
• Pb−Free Package is Available*  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
S
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Drain−to−Source Voltage  
V
DSS  
MARKING DIAGRAM  
AND PIN ASSIGNMENT  
Drain−to−Gate Voltage (R = 1.0 MW)  
V
DGR  
60  
GS  
Gate−to−Source Voltage  
− Continuous  
4
V
15  
25  
Vdc  
Vpk  
GS  
4
− Non−repetitive (t ≤ 10 ms)  
V
GSM  
Drain  
p
Drain Current − Continuous @ 25°C  
Drain Current − Continuous @ 100°C  
I
23  
15  
81  
Adc  
Apk  
D
I
D
I
DM  
Drain Current − Single Pulse (t ≤ 10 ms)  
p
TO−220AB  
CASE 221A  
STYLE 5  
MTP  
23P06VG  
AYWW  
Total Power Dissipation @ 25°C  
Derate above 25°C  
P
D
90  
0.60  
W
W/°C  
Operating and Storage Temperature Range  
T , T  
−55 to 175  
794  
°C  
1
J
stg  
2
3
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
1
3
Energy − Starting T = 25°C  
J
Gate  
Source  
(V = 25 Vdc, V = 10 Vdc, Peak  
DD  
GS  
2
I = 23 Apk, L = 3.0 mH, R = 25 W)  
L
G
Drain  
Thermal Resistance − Junction−to−Case  
Thermal Resistance − Junction−to−Ambient  
R
R
1.67  
62.5  
°C/W  
°C  
q
JC  
JA  
MTP23P06V = Device Code  
q
A
Y
= Location Code  
= Year  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from Case for 10 seconds  
T
260  
L
WW  
G
= Work Week  
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units/Rail  
50 Units/Rail  
MTP23P06V  
TO−220AB  
MTP23P06VG  
TO−220AB  
(Pb−Free)  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
June, 2006 − Rev. 4  
MTP23P06V/D  
1234567

中文翻译

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MTP23P06VG 替代型号

型号 品牌 替代类型 描述 数据表
SUP75P03-07-E3 VISHAY

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