生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.83 | 其他特性: | LOGIC LEVEL COMPATIBLE |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 25 A |
最大漏源导通电阻: | 0.077 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 125 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP25N10ELAF | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
MTP25N10ELC | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
MTP25N10ELD1 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
MTP25N10ELL | MOTOROLA |
获取价格 |
25A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP25N10ELN | MOTOROLA |
获取价格 |
25A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP25N10ELU | MOTOROLA |
获取价格 |
25 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP25N10ELU2 | MOTOROLA |
获取价格 |
25 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP25N10ELUA | MOTOROLA |
获取价格 |
25A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP25N10M | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Me | |
MTP2603G6 | CYSTEKEC |
获取价格 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |