Datasheet > MTE015N15RFP

MTE015N15RFP

更新时间： 2022-02-26 13:45:01

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
8页	601K
描述
N-Channel Enhancement Mode Power MOSFET

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数据手册

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MTE015N15RFP 数据手册

Spec. No. : C838FP

Issued Date : 2016.11.21

Revised Date : 2017.01.04

Page No. : 7/ 8

CYStech Electronics Corp.

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

100C

150C

60-120 seconds

150C

200C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183C

60-150 seconds

217C

60-150 seconds

Peak Temperature(TP)

240 +0/-5 C

260 +0/-5 C

Time within 5C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6C/second max.

6 minutes max.

8 minutes max.

Time 25 C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTE015N15RFP

CYStek Product Specification

1...4 5 678

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