Datasheet > MTE015N15RFP

MTE015N15RFP

更新时间： 2022-02-26 13:45:01

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
8页	601K
描述
N-Channel Enhancement Mode Power MOSFET

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数据手册

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MTE015N15RFP 数据手册

Spec. No. : C838FP

Issued Date : 2016.11.21

Revised Date : 2017.01.04

Page No. : 4/ 8

CYStech Electronics Corp.

Typical Characteristics

Brekdown Voltage vs Junction Temperature

Typical Output Characteristics

1.4

1.2

200

10V,9V,8V

180

160

140

120

100

0.8

0.6

0.4

ID=250μA,

VGS=0V

VGS=4.5V

-75 -50 -25

25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

VDS, Drain-Source Voltage(V)

Static Drain-Source On-State resistance vs Drain Current

Reverse Drain Current vs Source-Drain Voltage

100

1.2

VGS=10V

0.8

0.6

0.4

0.2

Tj=25°C

Tj=150°C

0.1

100

ID, Drain Current(A)

IDR, Reverse Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

VGS=10V, ID=30A

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

200

2.8

2.4

180

160

140

120

100

ID=30A

1.6

1.2

0.8

0.4

RDS(ON)@Tj=25°C : 16mΩ typ.

-75 -50 -25

25 50 75 100 125 150 175

VGS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTE015N15RFP

CYStek Product Specification

1 2 345 6 7 8

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