Datasheet > MTE030N10QJ3

MTE030N10QJ3

更新时间： 2022-02-26 13:34:42

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	690K
描述
N -Channel Enhancement Mode Power MOSFET

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数据手册

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MTE030N10QJ3 数据手册

Spec. No. : C168J3

Issued Date : 2016.03.17

Revised Date : 2016.04.27

Page No. : 1/9

CYStech Electronics Corp.

N -Channel Enhancement Mode Power MOSFET

MTE030N10QJ3

BVDSS

ID@VGS=10V, TC=25°C

100V

29A

RDS(ON)@VGS=10V, ID=15A

25.3mΩ(typ)

Features

 Low Gate Charge

 Simple Drive Requirement

 Pb-free lead plating and halogen-free package

Equivalent Circuit

Outline

MTE030N10QJ3

TO-252(DPAK)

D S

G：Gate D：Drain

S：Source

Ordering Information

Device

Package

TO-252

Shipping

MTE030N10QJ3-0-T3-G

2500 pcs / Tape & Reel

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T3 : 2500 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTE030N10QJ3

CYStek Product Specification

12 3 4 5 6 7...9

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