Datasheet > MTE030N10RV8-0-T6-G

MTE030N10RV8-0-T6-G

更新时间： 2022-02-26 13:41:47

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	412K
描述
N-Channel Enhancement Mode Power MOSFET

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MTE030N10RV8-0-T6-G 数据手册

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Spec. No. : C053V8

Issued Date : 2017.09.11

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

N-Channel Enhancement Mode Power MOSFET

MTE030N10RV8

BV^DSS

100V

16.5A

5.7A

ID @ TC=25°C, VGS=10V

ID @ TA=25°C, VGS=10V

29.4mΩ

RDSON(TYP)

VGS=10V, ID=20A

Features

• Single Drive Requirement

• Low On-resistance

• Fast Switching Characteristic

• Pb-free lead plating and halogen-free package

Equivalent Circuit

Outline

DFN3×3

MTE030N10RV8

Pin 1

G：Gate D：Drain S：Source

Ordering Information

Device

Package

DFN3×3

(Pb-free lead plating and halogen-free package)

Shipping

3000 pcs / Tape & Reel

MTE030N10RV8-0-T6-G

Environment friendly grade : S for RoHS compliant products, G for RoHS

compliant and green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTE030N10RV8

CYStek Product Specification

12 3 4 5 6 7...9

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