Datasheet > MT58L256L18P1T-4.4IT

MT58L256L18P1T-4.4IT

更新时间： 2023-01-03 09:20:02

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
27页	447K
描述
Cache SRAM, 256KX18, 2.6ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100

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中文翻译

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数据手册

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MT58L256L18P1T-4.4IT 数据手册

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PRELIMINARY

4Mb : 256K x 18, 128K x 32/36

PIPELINED, SCD SYNCBURST SRAM

4Mb SYNCBURST^™

SRAM

MT58L256L18P1, MT58L128L32P1,

MT58L128L36P1; MT58L256V18P1,

MT58L128V32P1, MT58L128V36P1

3.3V VDD, 3.3V o r 2.5V I/O, Pip e lin e d , Sin g le -Cycle

De se le ct

FEATURES

• Fast clock an d OE# access tim es

• Sin gle +3.3V +0.3V/-0.165V power supply (V^DD

• Separate +3.3V or +2.5V isolated output buffer

supply (VDDQ)

100-PIN TQFP*

)

• SNOOZE MODE for reduced-power stan dby

• Sin gle-cycle deselect (Pen tium ^®BSRAM-com patible)

• Com m on data in puts an d data outputs

• In dividual BYTE WRITE con trol an d GLOBAL

WRITE

• Th ree ch ip en ables for sim ple depth expan sion an d

address pipelin in g

• Clock-con trolled an d registered addresses, data I/Os

an d con trol sign als

• In tern ally self-tim ed WRITE cycle

• Burst con trol pin (in terleaved or lin ear burst)

• Autom atic power-down for portable application s

• 100-lead TQFP package for h igh den sity, h igh speed

• 119-pin BGA package

119-PIN BGA

• Low capacitive bus loadin g

• x18, x32 an d x36 version s available

OPTIONS

MARKING

• Tim in g (Access/Cycle/MHz)

2.3n s/4n s/250 MHz

2.6n s/4.4n s/225 MHz

3.1n s/5n s/200 MHz

3.5n s/6n s/166 MHz

4.0n s/7.5n s/133 MHz

5n s/10n s/100 MHz

• Con figuration s

3.3V I/O

-4

-4.4

-5

-6

-7.5

-10

256K x 18

128K x 32

128K x 36

MT58L256L18P1

MT58L128L32P1

MT58L128L36P1

*JEDEC-standard MS-026 BHA (LQFP).

2.5V I/O

GENERAL DESCRIPTION

Th e Micron ^®Syn cBurst^™SRAM fam ily em ploys

h igh -speed, low-power CMOS design s th at are fabri-

cated usin g an advan ced CMOS process.

256K x 18

128K x 32

128K x 36

MT58L256V18P1

MT58L128V32P1

MT58L128V36P1

• Packages

Micro n ’s 4Mb Syn cBu rst SRAMs in t egrat e a

256K x 18, 128K x 32, or 128K x 36 SRAM core with

advan ced syn ch ron ous periph eral circuitry an d a 2-bit

burst coun ter. All syn ch ron ous in puts pass th rough

registers con trolled by a positive-edge-triggered sin gle

clock in put (CLK). Th e syn ch ron ous in puts in clude all

addresses, all data in puts, active LOW ch ip en able

(CE#), two addition al ch ip en ables for easy depth ex-

100-pin TQFP

119-pin , 14m m x 22m m BGA

• Operatin g Tem perature Ran ge

Com m ercial (0°C to +70°C)

In dustrial (-40°C to +85°C)

Non e

Part Number Example:

MT58L256L18P1T-6 IT

4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM

MT58L256L18P1.p65 – Rev. 3/00

Micron Technology, Inc., reserves the right to change products or specifications without notice.

123 4 5 6 7...27

中文翻译

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与MT58L256L18P1T-4.4IT相关器件

型号	品牌	获取价格	描述	数据表
MT58L256L18P1T-4IT	CYPRESS	获取价格	Standard SRAM, 256KX18, 2.3ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L256L18P1T-5	ROCHESTER	获取价格	256KX18 CACHE SRAM, 2.8ns, PQFP100, PLASTIC, MS-026, TQFP-100
MT58L256L18P1T-5IT	CYPRESS	获取价格	Cache SRAM, 256KX18, 3.1ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L256L18P1T-6	ROCHESTER	获取价格	256KX18 CACHE SRAM, 3.5ns, PQFP100, PLASTIC, MS-026, TQFP-100
MT58L256L18P1T-6IT	CYPRESS	获取价格	Cache SRAM, 256KX18, 3.5ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L256L18P1T-7.5	ROCHESTER	获取价格	256KX18 CACHE SRAM, 4ns, PQFP100, PLASTIC, MS-026, TQFP-100
MT58L256L18P1T-7.5IT	CYPRESS	获取价格	Cache SRAM, 256KX18, 4ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L256L32D	MICRON	获取价格	8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
MT58L256L32DB-10IT	CYPRESS	获取价格	Standard SRAM, 256KX32, 5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119
MT58L256L32DB-5	CYPRESS	获取价格	Standard SRAM, 256KX32, 3.1ns, CMOS, PBGA119, 14 X 22 MM, BGA-119

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