Datasheet > MT58L256L32DF-10IT

MT58L256L32DF-10IT

更新时间： 2023-01-02 19:58:40

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
26页	419K
描述
Standard SRAM, 256KX32, 5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165

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8Mb: 512K x 18, 256K x 32/36

3.3V I/O, PIPELINED, DCD SYNCBURST SRAM

™

MT58L512L18D, MT58L256L32D,

8Mb SYNCBURST

SRAM

MT58L256L36D

3.3V VDD, 3.3V I/O, Pipelined, Double-

Cycle Deselect

FEATURES

• Fast clock and OE# access times

100-Pin TQFP**

• Single +3.3V +0.3V/-0.165V power supply (V^DD)

• Separate +3.3V isolated output buffer supply (V^DDQ)

• SNOOZE MODE for reduced-power standby

• Common data inputs and data outputs

• Individual BYTE WRITE control and GLOBAL WRITE

• Three chip enables for simple depth expansion and

address pipelining

• Clock-controlled and registered addresses, data I/Os

and control signals

• Internally self-timed WRITE cycle

• Burst control (interleaved or linear burst)

• Automatic power-down for portable applications

• 100-pin TQFP package

165-Pin FBGA

• 165-pin FBGA package

• Low capacitive bus loading

• x18, x32, and x36 versions available

OPTIONS

MARKING

• Timing (Access/Cycle/MHz)

3.5ns/6ns/166 MHz

4.0ns/7.5ns/133 MHz

5ns/10ns/100 MHz

-6

-7.5

-10

• Configurations

512K x 18

MT58L512L18D

MT58L256L32D

MT58L256L36D

256K x 32

256K x 36

NOTE:1. JEDEC-standard MS-026 BHA (LQFP).

• Packages

100-pin TQFP (2-chip enable)

100-pin TQFP (3-chip enable)

165-pin, 13mm x 15mm FBGA

GENERAL DESCRIPTION

TheMicron^®SyncBurst^™SRAMfamilyemployshigh-

speed, low-power CMOS designs that are fabricated us-

ing an advanced CMOS process.

• Operating Temperature Range

Commercial (0°C to +70°C)

Industrial (-40°C to +85°C)**

None

Micron’s 8Mb SyncBurst SRAMs integrate a 512K x 18,

256K x 32, or 256K x 36 SRAM core with advanced syn-

chronous peripheral circuitry and a 2-bit burst counter.

All synchronous inputs pass through registers controlled

by a positive-edge-triggered single-clock input (CLK).

The synchronous inputs include all addresses, all data

inputs, active LOW chip enable (CE#), two additional

chip enables for easy depth expansion (CE2, CE2#), burst

control inputs (ADSC#, ADSP#, ADV#), byte write

enables (BWx#) and global write (GW#). Note that CE2#

is not available on the T Version.

Part Number Example

MT58L512L18DT-7.5

* A Part Marking Guide for the FBGA devices can be found on Micron’s

Web site—http://www.micron.com/support/index.html.

** Industrial temperature range offered in specific speed grades and

configurations. Contact factory for more information.

8Mb: 512K x 18, 256K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM

MT58L512L18D_D.p65 – Rev. 2/02

Micron Technology, Inc., reserves the right to change products or specifications without notice.

12 3 4 5 6 7...26

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与MT58L256L32DF-10IT相关器件

型号	品牌	描述	获取价格	数据表
MT58L256L32DF-6	CYPRESS	Cache SRAM, 256KX32, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165	获取价格
MT58L256L32DF-6	ROCHESTER	256KX32 CACHE SRAM, 3.5ns, PBGA165, 13 X 15 MM, FBGA-165	获取价格
MT58L256L32DF-6IT	CYPRESS	Standard SRAM, 256KX32, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165	获取价格
MT58L256L32DF-7.5	CYPRESS	Cache SRAM, 256KX32, 4ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165	获取价格
MT58L256L32DS-10	ROCHESTER	256KX32 CACHE SRAM, 5ns, PQFP100, PLASTIC, TQFP-100	获取价格
MT58L256L32DS-5	CYPRESS	Standard SRAM, 256KX32, 3.1ns, CMOS, PQFP100, MS-026, TQFP-100	获取价格

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