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MT58L128L36P1F-10 PDF预览

MT58L128L36P1F-10

更新时间: 2024-02-21 15:09:14
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
30页 466K
描述
Cache SRAM, 128KX36, 5ns, CMOS, PBGA165, FBGA-165

MT58L128L36P1F-10 数据手册

 浏览型号MT58L128L36P1F-10的Datasheet PDF文件第4页浏览型号MT58L128L36P1F-10的Datasheet PDF文件第5页浏览型号MT58L128L36P1F-10的Datasheet PDF文件第6页浏览型号MT58L128L36P1F-10的Datasheet PDF文件第8页浏览型号MT58L128L36P1F-10的Datasheet PDF文件第9页浏览型号MT58L128L36P1F-10的Datasheet PDF文件第10页 
4Mb: 256K x 18, 128K x 32/36  
PIPELINED, SCD SYNCBURST SRAM  
TQFPPINDESCRIPTIONS(continued)  
x18  
x32/x36  
SYMBOL TYPE  
DESCRIPTION  
85  
85  
ADSC#  
Input Synchronous Address Status Controller: This active LOW input  
interrupts any ongoing burst, causing a new external address to  
be registered. A READ or WRITE is performed using the new  
address if CE# is LOW. ADSC# is also used to place the chip into  
power-down state when CE# is HIGH.  
31  
64  
31  
64  
MODE  
ZZ  
Input Mode: This input selects the burst sequence. A LOW on this pin  
selects “linear burst.” NC or HIGH on this pin selects “interleaved  
burst.” Do not alter input state while device is operating.  
Input Snooze Enable: This active HIGH, asynchronous input causes the  
device to enter a low-power standby mode in which all data in  
the memory array is retained. When ZZ is active, all other inputs  
are ignored.  
(a) 58, 59,  
62, 63, 68, 69, 56–59, 62, 63  
72, 73  
(b) 8, 9, 12,  
13, 18, 19, 22, 72–75, 78, 79  
(a) 52, 53,  
DQa  
DQb  
Input/ SRAM Data I/Os: For the x18 version, Byte “a” is DQa pins; Byte  
Output “b” is DQb pins. For the x32 and x36 versions, Byte “a” is DQa  
pins; Byte “b” is DQb pins; Byte “c” is DQc pins; Byte “d” is  
DQd pins. Input data must meet setup and hold times around  
the rising edge of CLK.  
(b) 68, 69  
23  
(c) 2, 3, 6-9,  
12, 13  
(d) 18, 19,  
22–25, 28, 29  
DQc  
DQd  
74  
24  
51  
80  
1
NC/DQPa NC/ No Connect/Parity Data I/Os: On the x32 version, these pins are  
NC/DQPb  
NC/DQPc  
NC/DQPd  
I/O  
No Connect (NC). On the x18 version, Byte “a” parity is DQPa;  
Byte “b” parity is DQPb. On the x36 version, Byte “a” parity is  
DQPa; Byte “b” parity is DQPb; Byte “c” parity is DQPc; Byte “d”  
parity is DQPd.  
30  
14, 15, 41, 65, 14, 15, 41, 65,  
91 91  
VDD  
VDDQ  
VSS  
Supply Power Supply: See DC Electrical Characteristics and Operating  
Conditions for range.  
4, 11, 20, 27, 4, 11, 20, 27,  
54, 61, 70, 77 54, 61, 70, 77  
Supply Isolated Output Buffer Supply: See DC Electrical Characteristics  
and Operating Conditions for range.  
5, 10, 17, 21, 5, 10, 17, 21,  
26, 40, 55, 60, 26, 40, 55, 60,  
67, 71, 76, 90 67, 71, 76, 90  
Supply Ground: GND.  
38, 39  
38, 39  
DNU  
NC  
Do Not Use: These signals may either be unconnected or wired to  
GND to improve package heat dissipation.  
1–3, 6, 7, 16,  
25, 28–30,  
51–53, 56, 57,  
66, 75, 78, 79,  
95, 96  
16, 66  
No Connect: These signals are not internally connected and  
may be connected to ground to improve package heat  
dissipation.  
42, 43  
42, 43  
NF  
No Function: These pins are internally connected to the die and  
have the capacitance of input pins. It is allowable to leave these  
pins unconnected or driven by signals. Reserved for address  
expansion; pin 43 becomes an SA at 8Mb density and pin 42  
becomes an SA at 16Mb density.  
4Mb:256Kx18, 128Kx32/36Pipelined, SCDSyncBurstSRAM  
MT58L256L18P1_F.p65 – Rev. F, Pub. 1/03 EN  
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.  
7
©2003,MicronTechnology,Inc.  

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