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MT58L128L36P1T-4.4 PDF预览

MT58L128L36P1T-4.4

更新时间: 2024-02-12 07:47:42
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟静态存储器内存集成电路
页数 文件大小 规格书
30页 466K
描述
Cache SRAM, 128KX36, 2.6ns, CMOS, PQFP100, PLASTIC, MS-026, TQFP-100

MT58L128L36P1T-4.4 技术参数

是否Rohs认证:不符合生命周期:Transferred
零件包装代码:QFP包装说明:PLASTIC, MS-026, TQFP-100
针数:100Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
Factory Lead Time:1 week风险等级:5.53
Is Samacsys:N最长访问时间:2.6 ns
其他特性:PIPELINED ARCHITECTURE最大时钟频率 (fCLK):225 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e0长度:20 mm
内存密度:4718592 bit内存集成电路类型:CACHE SRAM
内存宽度:36功能数量:1
端子数量:100字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.01 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.575 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD宽度:14 mm
Base Number Matches:1

MT58L128L36P1T-4.4 数据手册

 浏览型号MT58L128L36P1T-4.4的Datasheet PDF文件第2页浏览型号MT58L128L36P1T-4.4的Datasheet PDF文件第3页浏览型号MT58L128L36P1T-4.4的Datasheet PDF文件第4页浏览型号MT58L128L36P1T-4.4的Datasheet PDF文件第5页浏览型号MT58L128L36P1T-4.4的Datasheet PDF文件第6页浏览型号MT58L128L36P1T-4.4的Datasheet PDF文件第7页 
4Mb: 256K x 18, 128K x 32/36  
PIPELINED, SCD SYNCBURST SRAM  
4Mb SYNCBURST™  
SRAM  
MT58L256L18P1, MT58L128L32P1,  
MT58L128L36P1; MT58L256V18P1,  
MT58L128V32P1, MT58L128V36P1  
3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle  
Deselect  
FEATURES  
• Fast clock and OE# access times  
• Single +3.3V +0.3V/-0.165V power supply (VDD  
1
100-PINTQFP  
)
• Separate +3.3V or +2.5V isolated output buffer  
supply (VDDQ)  
• SNOOZE MODE for reduced-power standby  
• Single-cycle deselect (Pentium® BSRAM-compatible)  
• Common data inputs and data outputs  
• Individual BYTE WRITE control and GLOBAL WRITE  
• Three chip enables for simple depth expansion  
and address pipelining  
• Clock-controlled and registered addresses, data  
I/Os and control signals  
• Internally self-timed WRITE cycle  
• Burst control pin (interleaved or linear burst)  
• Automatic power-down for portable applications  
• 165-pin FBGA package  
165-BALLFBGA  
• 100-pin TQFP package  
• Low capacitive bus loading  
• x18, x32, and x36 versions available  
OPTIONS  
MARKING  
• Timing (Access/Cycle/MHz)  
2.6ns/4.4ns/225 MHz  
2.8ns/5ns/200 MHz  
3.5ns/6ns/166 MHz  
4.0ns/7.5ns/133 MHz  
5ns/10ns/100 MHz  
-4.4  
-5  
-6  
-7.5  
-10  
NOTE: 1. JEDEC-standardMS-026BHA(LQFP).  
• Configurations  
3.3V I/O  
256K x 18  
128K x 32  
128K x 36  
2.5V I/O  
MT58L256L18P1  
MT58L128L32P1  
MT58L128L36P1  
* A Part Marking Guide for the FBGA devices can be found on Micron’s  
Web site—http://www.micron.com/support/index.html.  
** Industrial temperature range offered in specific speed grades and  
configurations. Contact factory for more information.  
256K x 18  
128K x 32  
128K x 36  
MT58L256V18P1  
MT58L128V32P1  
MT58L128V36P1  
GENERALDESCRIPTION  
• Packages  
The Micron® SyncBurstSRAM family employs  
high-speed, low-power CMOS designs that are fabri-  
cated using an advanced CMOS process.  
100-pin TQFP  
165-pin FBGA  
T
F*  
• Operating Temperature Range  
Commercial (0°C to +70°C)  
Micron’s 4Mb SyncBurst SRAMs integrate a  
256K x 18, 128K x 32, or 128K x 36 SRAM core with ad-  
vanced synchronous peripheral circuitry and a 2-bit  
burst counter. All synchronous inputs pass through  
registers controlled by a positive-edge-triggered single  
clock input (CLK). The synchronous inputs include all  
addresses, all data inputs, active LOW chip enable  
None  
IT  
Industrial (-40°C to +85°C)**  
Part Number Example:  
MT58L256L18P1T-6  
4Mb:256Kx18, 128Kx32/36Pipelined, SCDSyncBurstSRAM  
MT58L256L18P1_F.p65 – Rev. F, Pub. 1/03 EN  
©2003,MicronTechnology,Inc.  
1
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.  

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