MT3S36T

更新时间： 2024-01-25 08:13:58

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器局域网
页数	文件大小	规格书
4页	120K
描述
TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE

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MT3S36T 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.78	Is Samacsys：	N
其他特性：	LOW NOISE	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	0.036 A	基于收集器的最大容量：	0.85 pF
集电极-发射极最大电压：	4.5 V	配置：	SINGLE
最小直流电流增益 (hFE)：	70	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-F3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.1 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	19000 MHz	Base Number Matches：	1

MT3S36T 数据手册

MT3S36T

RESTRICTIONS ON PRODUCT USE

000707EAA

·TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other

rights of the third parties which may result from its use. No license is granted by implication or otherwise under any

intellectual property or other rights of TOSHIBA CORPORATION or others.

·The information contained herein is subject to change without notice.

2002-08-19

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与MT3S36T相关器件

型号	品牌	获取价格	描述	数据表
MT3S37FS	TOSHIBA	获取价格	UHF Low-Noise Amplifier Application
MT3S37T	TOSHIBA	获取价格	UHF LOW NOISE AMPLIFIER APPLICATION
MT3S37T	ETL	获取价格	VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
MT3S38T	TOSHIBA	获取价格	TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S40FS	TOSHIBA	获取价格	TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-1E1A, FSM, 3 PIN, BIP RF Small
MT3S40T	TOSHIBA	获取价格	VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
MT3S41FS	TOSHIBA	获取价格	VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
MT3S41FS_07	TOSHIBA	获取价格	UHF Low-Noise Amplifier Application
MT3S41T	TOSHIBA	获取价格	VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
MT3S41T_07	TOSHIBA	获取价格	UHF LOW NOISE AMPLIFIER APPLICATION

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