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MT3S03A PDF预览

MT3S03A

更新时间: 2023-06-15 00:00:00
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
6页 279K
描述
TRANSISTOR,BJT,NPN,5V V(BR)CEO,40MA I(C),SOT-416VAR

MT3S03A 技术参数

生命周期:Obsolete零件包装代码:SC-59
包装说明:S-MINI, 2-3F1A, SC-59, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.76
其他特性:LOW NOISE最大集电极电流 (IC):0.04 A
基于收集器的最大容量:1.1 pF集电极-发射极最大电压:5 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):10000 MHzBase Number Matches:1

MT3S03A 数据手册

 浏览型号MT3S03A的Datasheet PDF文件第2页浏览型号MT3S03A的Datasheet PDF文件第3页浏览型号MT3S03A的Datasheet PDF文件第4页浏览型号MT3S03A的Datasheet PDF文件第5页浏览型号MT3S03A的Datasheet PDF文件第6页 
MT3S03AT  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
MT3S03AT  
VHF~UHF Band Low Noise Amplifier Applications  
Unit: mm  
Low noise figure: NF = 1.4dB (typ.) (at f = 2 GHz)  
High gain: gain = 8dB (typ.) (at f = 2 GHz)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
10  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
2
40  
V
I
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
10  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
T
j
125  
TESM  
T
stg  
55 to 125  
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
TOSHIBA  
2-1B1A  
Weight: 2.2mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
1
2010-02-24  

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