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MT3S04SU PDF预览

MT3S04SU

更新时间: 2024-02-21 22:07:29
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器
页数 文件大小 规格书
3页 148K
描述
TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

MT3S04SU 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.66
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A基于收集器的最大容量:1.15 pF
集电极-发射极最大电压:5 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):7000 MHz
Base Number Matches:1

MT3S04SU 数据手册

 浏览型号MT3S04SU的Datasheet PDF文件第2页浏览型号MT3S04SU的Datasheet PDF文件第3页 
MT3S04AFS  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
MT3S04AFS  
Unit: mm  
VHF~UHF Band Low-Noise Amplifier Applications  
VHF~UHF Band Oscillator Applications  
Superior performance in oscillator applications  
Superior noise characteristics  
1
3
: NF = 1.3 dB, |S |2 = 9.5 dB (f = 1 GHz)  
0.8±0.05  
1.0±0.05  
2
21e  
0.1±0.05  
0.1±0.05  
Absolute Maximum Ratings (Ta = 25°C)  
1.Base  
2.Emitter  
3.Collector  
Characteristic  
Symbol  
Rating  
Unit  
fSM  
Collector- base voltage  
Collector- emitter voltage  
Emitter- base voltage  
Collector current  
V
V
V
10  
V
V
CBO  
CEO  
EBO  
5
2
JEDEC  
V
JEITA  
I
40  
mA  
mW  
mW  
°C  
°C  
C
Toshiba  
2-1E1A  
Base current  
I
10  
B
Weight: 0.0006 g (typ.)  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note 1)  
C
85  
T
j
125  
55~125  
T
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change  
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated  
failure rate, etc).  
Note 1: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.  
Marking  
2
1
3
0 1  
1
2007-11-01  

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