生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.65 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 1.15 pF | 集电极-发射极最大电压: | 5 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 80 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 7000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MT3S04SU | TOSHIBA |
获取价格 |
TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal |
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MT3S04T | TOSHIBA |
获取价格 |
TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal |
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MT3S04U | TOSHIBA |
获取价格 |
暂无描述 |
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MT3S05FS | TOSHIBA |
获取价格 |
VHF~UHF Band Low-Noise Amplifier Applications |
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MT3S05T | TOSHIBA |
获取价格 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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MT3S05T_07 | TOSHIBA |
获取价格 |
VHF~UHF Band Low Noise Amplifier Applications |
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MT3S06FS | TOSHIBA |
获取价格 |
VHF~UHF Band Low-Noise Amplifier Applications |
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MT3S06S | TOSHIBA |
获取价格 |
VHF-UHF Band Low Noise Amplifier Application |
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MT3S06S(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,5V V(BR)CEO,15MA I(C),SOT-416 |
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MT3S06S_07 | TOSHIBA |
获取价格 |
VHF~UHF Band Low Noise Amplifier Applications |
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