Datasheet > MT28F002B5

MT28F002B5

更新时间： 2022-12-11 18:17:54

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
31页	574K
描述
FLASH MEMORY

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数据手册

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MT28F002B5 数据手册

2Mb

SMART 5 BOOT BLOCK FLASH MEMORY

FLASH MEMORY

MT28F002B5

MT28F200B5

5V On ly, Du a l Su p p ly (Sm a rt 5)

FEATURES

• Five erase blocks:

40-Pin TSOP Typ e I 48-Pin TSOP Typ e I

16KB/8K-word boot block (protected)

Two 8KB/4K-word parameter blocks

Two main memory blocks

• Smart 5 technology (B5):

5V ±10% V^CC

5V ±10% VPP application/production

programming

12V ±5% VPP compatibility production

programming

44-Pin SOP

• Address access times: 60ns, 80ns

• 100,000 ERASE cycles

• Industry-standard pinouts

• Inputs and outputs are fully TTL-compatible

• Automated write and erase algorithm

• Two-cycle WRITE/ERASE sequence

• Byte- or word-wide READ and WRITE

(MT28F200B5, 128K x 16/256K x 8)

• Byte-wide READ and WRITE only

(MT28F002B5, 256K x 8)

GENERAL DESCRIPTION

The MT28F002B5 (x8) and MT28F200B5 (x16/x8)

are nonvolatile, electrically block-erasable (flash), pro-

• TSOP and SOP packaging options

grammable, read-only memories containing 2,097,152

bits organized as 262,144 bytes (8 bits) or 131,072

words (16 bits). Writing or erasing the device is done

with a 5V V^PPvoltage, while all operations are per-

formed with a 5V V^CC. Due to process technology

advances, 5V VPP is optimal for application and produc-

tion programming. For backward compatibility with

SmartVoltage technology, 12V VPP is supported for a

maximum of 100 cycles and may be connected for up

to 100 cumulative hours. These devices are fabricated

with Micron’s advanced CMOS floating-gate process.

The MT28F002B5 and MT28F200B5 are organized

into five separately erasable blocks. To ensure that

critical firmware is protected from accidental erasure or

overwrite, the devices feature a hardware-protected

boot block. Writing or erasing the boot block requires

either applying a super-voltage to the RP# pin or driv-

ing WP# HIGH in addition to executing the normal

writeorerasesequences. Thisblockmaybeusedtostore

code implemented in low-level system recovery. The

remaining blocks vary in density and are written and

erased with no additional security measures.

OPTIONS

• Timing

MARKING

60ns access

80ns access

-6

-8

-8 ET

• Configurations

256K x 8

MT28F002B5

MT28F200B5

128K x 16/256K x 8

• Boot Block Starting Word Address

Top (1FFFFH)

Bottom (00000H)

• Operating Temperature Range

Commercial (0°C to +70°C)

Extended (-40°C to +85°C)

None

• Packages

Plastic 44-pin SOP (600 mil)

Plastic 48-pin TSOP Type 1

(12mm x 20mm)

Plastic 40-pin TSOP

(10mm x 20mm)

Part Number Example:

PleaserefertoMicron’sWebsite(www.micron.com/

flash/htmls/datasheets.html) for the latest data sheet.

MT28F200B5SG-8 T

2Mb Smart 5 Boot Block Flash Memory

F50.p65 – Rev. 1/00

Micron Technology, Inc., reserves the right to change products or specifications without notice.

12 3 4 5 6 7...31

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